Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence

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Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence

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Title: Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence
Author: Likovich, Edward M.; Jaramillo, Rafael; Russell, Kasey Joe; Ramanathan, Shriram; Narayanamurti, Venkatesh

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Citation: Likovich, Edward M., Rafael Jaramillo, Kasey J. Russell, Shriram Ramanathan, and Venkatesch Narayanamurti. 2011. Narrow band defect luminescence from AI-doped ZnO probed by scanning tunneling cathodoluminescence. Applied Physics Letters 99(15): 151910.
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Abstract: We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor.
Published Version: doi:10.1063/1.3647622
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:5371009

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  • FAS Scholarly Articles [6466]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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