Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence

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Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence

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dc.contributor.author Likovich, Edward M.
dc.contributor.author Jaramillo, Rafael
dc.contributor.author Russell, Kasey Joe
dc.contributor.author Ramanathan, Shriram
dc.contributor.author Narayanamurti, Venkatesh
dc.date.accessioned 2011-12-12T19:45:27Z
dc.date.issued 2011
dc.identifier.citation Likovich, Edward M., Rafael Jaramillo, Kasey J. Russell, Shriram Ramanathan, and Venkatesch Narayanamurti. 2011. Narrow band defect luminescence from AI-doped ZnO probed by scanning tunneling cathodoluminescence. Applied Physics Letters 99(15): 151910. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.issn 1077-3118 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:5371009
dc.description.abstract We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor. en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher American Institute of Physics en_US
dc.relation.isversionof doi:10.1063/1.3647622 en_US
dash.license OAP
dc.subject aluminium en_US
dc.subject cathodoluminescence en_US
dc.subject defect states en_US
dc.subject II-VI semiconductors en_US
dc.subject photoluminescence en_US
dc.subject scanning tunnelling microscopy en_US
dc.subject semiconductor thin films en_US
dc.subject sputter deposition en_US
dc.subject wide band gap semiconductors en_US
dc.subject zinc compounds en_US
dc.title Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal Applied Physics Letters en_US
dash.depositing.author Narayanamurti, Venkatesh
dc.date.available 2011-12-12T19:45:27Z

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  • FAS Scholarly Articles [6463]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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