dc.contributor.author | Likovich, Edward M. | |
dc.contributor.author | Jaramillo, Rafael | |
dc.contributor.author | Russell, Kasey Joe | |
dc.contributor.author | Ramanathan, Shriram | |
dc.contributor.author | Narayanamurti, Venkatesh | |
dc.date.accessioned | 2011-12-12T19:45:27Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Likovich, Edward M., Rafael Jaramillo, Kasey J. Russell, Shriram Ramanathan, and Venkatesch Narayanamurti. 2011. Narrow band defect luminescence from AI-doped ZnO probed by scanning tunneling cathodoluminescence. Applied Physics Letters 99(15): 151910. | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.issn | 1077-3118 | en_US |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:5371009 | |
dc.description.abstract | We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor. | en_US |
dc.description.sponsorship | Engineering and Applied Sciences | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.relation.isversionof | doi:10.1063/1.3647622 | en_US |
dash.license | OAP | |
dc.subject | aluminium | en_US |
dc.subject | cathodoluminescence | en_US |
dc.subject | defect states | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | scanning tunnelling microscopy | en_US |
dc.subject | semiconductor thin films | en_US |
dc.subject | sputter deposition | en_US |
dc.subject | wide band gap semiconductors | en_US |
dc.subject | zinc compounds | en_US |
dc.title | Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence | en_US |
dc.type | Journal Article | en_US |
dc.description.version | Version of Record | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dash.depositing.author | Narayanamurti, Venkatesh | |
dc.date.available | 2011-12-12T19:45:27Z | |
dc.identifier.doi | 10.1063/1.3647622 | * |
dash.contributor.affiliated | Russell, Kasey | |
dash.contributor.affiliated | Narayanamurti, Venkatesh | |
dash.contributor.affiliated | Jaramillo, Rafael | |
dash.contributor.affiliated | Ramanathan, Shriram | |