Direct Graphene Growth on Insulator

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Direct Graphene Growth on Insulator

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Title: Direct Graphene Growth on Insulator
Author: Lippert, Gunther; Dabrowski, Jarek; Lemme, Max; Marcus, Charles Masamed; Seifarth, Olaf; Lupina, Grzegorz

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Citation: Lippert, Gunther, Jarek Dabrowski, Max Lemme, Charles Masamed Marcus, Olaf Seifarth, and Grzegorz Lupina. 2011. Direct graphene growth on insulator. Physica Status Solidi (b) 248(11): 2619-2622.
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Abstract: Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600 °C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel. Energetic carbon atoms impinge onto the mica. Few-layer graphene nucleates at step edges and at chemisorbed carbon atoms (black circles). At temperatures above 600 °C, nano-sized graphene flakes can slide freely to coalesce into a graphene film.
Published Version: doi:10.1002/pssb.201100052
Other Sources: http://arxiv.org/abs/1106.2070
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:8123166

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  • FAS Scholarly Articles [6464]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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