First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach

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First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach

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dc.contributor.author Gu, Jiangjiang
dc.contributor.author Liu, Yiqun
dc.contributor.author Wu, Yanqing
dc.contributor.author Colby, Robert
dc.contributor.author Gordon, Roy Gerald
dc.contributor.author Ye, Peide D.
dc.date.accessioned 2012-02-23T19:59:56Z
dc.date.issued 2012-02-23
dc.identifier.citation Gu, Jianjiang, Yiqun Liu, Yanqing Wu, Robert Colby, Roy G. Gordon, and Peide D. Ye. 2011. First experimental demonstration of gate-all-around III-V MOSFET by top-down approach. Paper presented at the 2011 IEEE International Electron Devices Meeting, Washington, D.C. en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:8231688
dc.description.abstract The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.relation.hasversion http://arxiv.org/abs/1112.3573 en_US
dash.license OAP
dc.subject mesoscale and nanoscale physics en_US
dc.title First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach en_US
dc.type Conference Paper en_US
dc.description.version Author's Original en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2012-02-23T19:59:56Z

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  • FAS Scholarly Articles [7220]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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