First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
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| dc.contributor.author |
Gu, Jiangjiang |
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| dc.contributor.author |
Liu, Yiqun |
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| dc.contributor.author |
Wu, Yanqing |
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| dc.contributor.author |
Colby, Robert |
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| dc.contributor.author |
Gordon, Roy Gerald
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| dc.contributor.author |
Ye, Peide D. |
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| dc.date.accessioned |
2012-02-23T19:59:56Z |
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| dc.date.issued |
2012-02-23 |
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| dc.identifier.citation |
Gu, Jianjiang, Yiqun Liu, Yanqing Wu, Robert Colby, Roy G. Gordon, and Peide D. Ye. 2011. First experimental demonstration of gate-all-around III-V MOSFET by top-down approach. Paper presented at the 2011 IEEE International Electron Devices Meeting, Washington, D.C. |
en_US |
| dc.identifier.uri |
http://nrs.harvard.edu/urn-3:HUL.InstRepos:8231688 |
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| dc.description.abstract |
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs. |
en_US |
| dc.description.sponsorship |
Chemistry and Chemical Biology |
en_US |
| dc.language.iso |
en_US |
en_US |
| dc.relation.hasversion |
http://arxiv.org/abs/1112.3573 |
en_US |
| dash.license |
OAP |
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| dc.subject |
mesoscale and nanoscale physics |
en_US |
| dc.title |
First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach |
en_US |
| dc.type |
Conference Paper |
en_US |
| dc.description.version |
Author's Original |
en_US |
| dash.depositing.author |
Gordon, Roy Gerald
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| dc.date.available |
2012-02-23T19:59:56Z |
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FAS Scholarly Articles [5171]
Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
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