Hole Spin Relaxation in Ge-Si Core-Shell Nanowire Qubits

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Hole Spin Relaxation in Ge-Si Core-Shell Nanowire Qubits

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Title: Hole Spin Relaxation in Ge-Si Core-Shell Nanowire Qubits
Author: Hu, Yongjie; Kuemmeth, Ferdinand; Lieber, Charles M.; Marcus, Charles Masamed

Note: Order does not necessarily reflect citation order of authors.

Citation: Hu, Yongjie, Ferdinand Kuemmeth, Charles M. Lieber, and Charles M. Marcus. 2012. Hole spin relaxation in Ge-Si core-shell nanowire qubits. Nature Nanotechnology 7(1): 47-50.
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Abstract: Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge–Si core–shell nanowire. With fast gating, we measure \(T_1\) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin–orbit mechanism that is usually masked by hyperfine contributions.
Published Version: doi:10.1038/nnano.2011.234
Other Sources: http://arxiv.org/abs/1110.4742
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:8822352

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  • FAS Scholarly Articles [7470]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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