Hole Spin Relaxation in Ge-Si Core-Shell Nanowire Qubits

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Hole Spin Relaxation in Ge-Si Core-Shell Nanowire Qubits

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dc.contributor.author Hu, Yongjie
dc.contributor.author Kuemmeth, Ferdinand
dc.contributor.author Lieber, Charles M.
dc.contributor.author Marcus, Charles Masamed
dc.date.accessioned 2012-06-04T14:57:14Z
dc.date.issued 2012
dc.identifier.citation Hu, Yongjie, Ferdinand Kuemmeth, Charles M. Lieber, and Charles M. Marcus. 2012. Hole spin relaxation in Ge-Si core-shell nanowire qubits. Nature Nanotechnology 7(1): 47-50. en_US
dc.identifier.issn 1748-3395 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:8822352
dc.description.abstract Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge–Si core–shell nanowire. With fast gating, we measure \(T_1\) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin–orbit mechanism that is usually masked by hyperfine contributions. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.description.sponsorship Physics en_US
dc.language.iso en_US en_US
dc.publisher Nature Publishing Group en_US
dc.relation.isversionof doi:10.1038/nnano.2011.234 en_US
dc.relation.hasversion http://arxiv.org/abs/1110.4742 en_US
dash.license OAP
dc.subject electronic properties and devices en_US
dc.subject quantum information en_US
dc.title Hole Spin Relaxation in Ge-Si Core-Shell Nanowire Qubits en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Nature Nanotechnology en_US
dash.depositing.author Lieber, Charles M.
dc.date.available 2012-06-04T14:57:14Z

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  • FAS Scholarly Articles [6898]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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