# FTIR Study of Copper Agglomeration during Atomic Layer Deposition of Copper

 Title: FTIR Study of Copper Agglomeration during Atomic Layer Deposition of Copper Author: Dai, Min; Kwon, Jinhee; Chabal, Yves J.; Halls, Mathew D.; Gordon, Roy Gerald Note: Order does not necessarily reflect citation order of authors. Citation: Dai, Min, Jinhee Kwon, Yves J. Chabal, Mathew D. Halls, and Roy Gerald Gordon. 2009. FTIR study of copper agglomeration during atomic layer deposition of copper. In CCMOS gate-stack scaling -- Materials, interfaces, and reliability implications, Vol. 1155, MRS Proceedings 2009: April 13-16, 2009, San Francisco, CA, ed. Alexander A. Demkov, et al., 1155-C11-06. Warrendale, PA: Materials Research Society. Full Text & Related Files: FTIR_study_of_copper.pdf (126.9Kb; PDF) Abstract: The growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate $$([Cu(^sBu-amd)]_2)$$ and molecular hydrogen $$(H_2)$$ on $$SiO_2/Si$$ surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on $$SiO_2$$ is presented involving the intensity variations of the $$SiO_2$$ LO/TO phonon modes after chemical reaction with the Cu precursor and after the $$H_2$$ precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C. Published Version: doi:10.1557/PROC-1155-C11-06 Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:8886763

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