# Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

 Title: Atomic Layer Deposition of Lanthanum-Based Ternary Oxides Author: Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy Gerald; Lehn, Jean-Sébastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V. Note: Order does not necessarily reflect citation order of authors. Citation: Wang, Hongtao, Jun-Jieh Wang, Roy Gerald Gordon, Jean-Sébastien M. Lehn, Huazhi Li, Daewon Hong, and Deo V. Shenai. 2009. Atomic layer deposition of lanthanum-based ternary oxides. Electrochemical and Solid-State Letters 12(4): G13-G15. Full Text & Related Files: atomic_layer_deposition.pdf (195.8Kb; PDF) Abstract: Lanthanum-based ternary oxide $$La_xM_{2−x}O_3$$ (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both $$LaScO_3$$ and $$LaLuO_3$$ films are amorphous while the as-deposited $$La_xY_{2−x}O_3$$ films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for $$LaScO_3$$, $$LaLuO_3$$, and $$La_{1.23}Y_{0.77}O_3$$ ﬁlms are $$\sim 23$$, $$28 \pm 1$$, and $$17 \pm 1.3$$, respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal $$SiO_2$$ with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio $$\sim 80:1$$. Published Version: doi:10.1149/1.3074314 Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9310888

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Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University