Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
| Title: | Atomic Layer Deposition of Lanthanum-Based Ternary Oxides |
| Author: |
Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy Gerald; Lehn, Jean-Sébastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V.
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Wang, Hongtao, Jun-Jieh Wang, Roy Gerald Gordon, Jean-Sébastien M. Lehn, Huazhi Li, Daewon Hong, and Deo V. Shenai. 2009. Atomic layer deposition of lanthanum-based ternary oxides. Electrochemical and Solid-State Letters 12(4): G13-G15. |
| Full Text & Related Files: |
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| Abstract: | Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited \(La_xY_{2−x}O_3\) films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for \(LaScO_3\), \(LaLuO_3\), and \(La_{1.23}Y_{0.77}O_3\) films are \(\sim 23\), \(28 \pm 1\), and \(17 \pm 1.3\), respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal \(SiO_2\) with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio \(\sim 80:1\). |
| Published Version: | doi:10.1149/1.3074314 |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:9310888 |
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