Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

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Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Show simple item record Wang, Hongtao Wang, Jun-Jieh Gordon, Roy Gerald Lehn, Jean-Sébastien M. Li, Huazhi Hong, Daewon Shenai, Deo V. 2012-07-30T01:58:16Z 2009
dc.identifier.citation Wang, Hongtao, Jun-Jieh Wang, Roy Gerald Gordon, Jean-Sébastien M. Lehn, Huazhi Li, Daewon Hong, and Deo V. Shenai. 2009. Atomic layer deposition of lanthanum-based ternary oxides. Electrochemical and Solid-State Letters 12(4): G13-G15. en_US
dc.identifier.issn 1099-0062 en_US
dc.identifier.issn 1944-8775 en_US
dc.description.abstract Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited \(La_xY_{2−x}O_3\) films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for \(LaScO_3\), \(LaLuO_3\), and \(La_{1.23}Y_{0.77}O_3\) films are \(\sim 23\), \(28 \pm 1\), and \(17 \pm 1.3\), respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal \(SiO_2\) with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio \(\sim 80:1\). en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher Electrochemical Society en_US
dc.relation.isversionof doi:10.1149/1.3074314 en_US
dash.license LAA
dc.subject amorphous state en_US
dc.subject atomic layer deposition en_US
dc.subject dielectric thin films en_US
dc.subject lanthanum compounds en_US
dc.subject leakage currents en_US
dc.subject permittivity en_US
dc.subject Poole-Frenkel effect en_US
dc.subject transmission electron microscopy en_US
dc.title Atomic Layer Deposition of Lanthanum-Based Ternary Oxides en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal Electrochemical and Solid-State Letters en_US Gordon, Roy Gerald 2012-07-30T01:58:16Z

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