Overview of ALD Precursors and Reaction Mechanisms

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Overview of ALD Precursors and Reaction Mechanisms

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Title: Overview of ALD Precursors and Reaction Mechanisms
Author: Gordon, Roy Gerald
Citation: Gordon, Roy G. 2011. Introduction to ALD Precursors and Reaction Mechanisms. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011.
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Abstract: Successful use of ALD requires suitable chemical precursors used under reaction conditions that are appropriate for them. There are many requirements for ALD precursors: sufficient volatility, thermal stability and reactivity with substrates and with the films being deposited. In addition, it is easier to produce the required vapors if the precursor is liquid at room temperature, or if it is a solid with melting point below the vaporization temperature, or if it is soluble in an inert solvent with vapor pressure similar to that of the precursor. The precursor vapor should not etch or corrode the substrate or deposited film. Ideally, the precursors should be non-flammable, non-corrosive, non-toxic, simple and non-hazardous to make and inexpensive.
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639954

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  • FAS Scholarly Articles [7495]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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