Overview of ALD Precursors and Reaction Mechanisms

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Overview of ALD Precursors and Reaction Mechanisms

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dc.contributor.author Gordon, Roy Gerald
dc.date.accessioned 2012-09-25T18:20:12Z
dc.date.issued 2011
dc.identifier.citation Gordon, Roy G. 2011. Introduction to ALD Precursors and Reaction Mechanisms. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011. en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639954
dc.description.abstract Successful use of ALD requires suitable chemical precursors used under reaction conditions that are appropriate for them. There are many requirements for ALD precursors: sufficient volatility, thermal stability and reactivity with substrates and with the films being deposited. In addition, it is easier to produce the required vapors if the precursor is liquid at room temperature, or if it is a solid with melting point below the vaporization temperature, or if it is soluble in an inert solvent with vapor pressure similar to that of the precursor. The precursor vapor should not etch or corrode the substrate or deposited film. Ideally, the precursors should be non-flammable, non-corrosive, non-toxic, simple and non-hazardous to make and inexpensive. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dash.license LAA
dc.title Overview of ALD Precursors and Reaction Mechanisms en_US
dc.type Conference Paper en_US
dc.description.version Author's Original en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2012-09-25T18:20:12Z

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  • FAS Scholarly Articles [7213]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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