Overview of ALD Precursors and Reaction Mechanisms

DSpace/Manakin Repository

dc.contributor.author	Gordon, Roy Gerald
dc.date.accessioned	2012-09-25T18:20:12Z
dc.date.issued	2011
dc.identifier.citation	Gordon, Roy G. 2011. Introduction to ALD Precursors and Reaction Mechanisms. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011.	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639954
dc.description.abstract	Successful use of ALD requires suitable chemical precursors used under reaction conditions that are appropriate for them. There are many requirements for ALD precursors: sufficient volatility, thermal stability and reactivity with substrates and with the films being deposited. In addition, it is easier to produce the required vapors if the precursor is liquid at room temperature, or if it is a solid with melting point below the vaporization temperature, or if it is soluble in an inert solvent with vapor pressure similar to that of the precursor. The precursor vapor should not etch or corrode the substrate or deposited film. Ideally, the precursors should be non-flammable, non-corrosive, non-toxic, simple and non-hazardous to make and inexpensive.	en_US
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.language.iso	en_US	en_US
dash.license	LAA
dc.title	Overview of ALD Precursors and Reaction Mechanisms	en_US
dc.type	Conference Paper	en_US
dc.description.version	Author's Original	en_US
dash.depositing.author	Gordon, Roy Gerald
dc.date.available	2012-09-25T18:20:12Z