Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

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Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

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Title: Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication
Author: Au, Yeung Billy; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy Gerald

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Citation: Au, Yeung, Youbo Lin, Hoon Kim, Zhengwen Li, and Roy G. Gordon. 2011. Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011.
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Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639958

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  • FAS Scholarly Articles [7219]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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