Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

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Title:	Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication
Author:	Au, Yeung Billy; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy Gerald Note: Order does not necessarily reflect citation order of authors.
Citation:	Au, Yeung, Youbo Lin, Hoon Kim, Zhengwen Li, and Roy G. Gordon. 2011. Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011.
Full Text & Related Files:	Au_ALDCVD.pdf (3.968Mb; PDF)
Terms of Use:	This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page:	http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639958

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