Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

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dc.contributor.author	Au, Yeung Billy
dc.contributor.author	Lin, Youbo
dc.contributor.author	Kim, Hoon
dc.contributor.author	Li, Zhengwen
dc.contributor.author	Gordon, Roy Gerald
dc.date.accessioned	2012-09-25T18:53:52Z
dc.date.issued	2011
dc.identifier.citation	Au, Yeung, Youbo Lin, Hoon Kim, Zhengwen Li, and Roy G. Gordon. 2011. Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011.	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639958
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.language.iso	en_US	en_US
dash.license	LAA
dc.title	Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication	en_US
dc.type	Conference Paper	en_US
dc.description.version	Author's Original	en_US
dash.depositing.author	Gordon, Roy Gerald
dc.date.available	2012-09-25T18:53:52Z

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