Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

DSpace/Manakin Repository

Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

Show simple item record

dc.contributor.author Au, Yeung Billy
dc.contributor.author Lin, Youbo
dc.contributor.author Kim, Hoon
dc.contributor.author Li, Zhengwen
dc.contributor.author Gordon, Roy Gerald
dc.date.accessioned 2012-09-25T18:53:52Z
dc.date.issued 2011
dc.identifier.citation Au, Yeung, Youbo Lin, Hoon Kim, Zhengwen Li, and Roy G. Gordon. 2011. Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011. en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639958
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dash.license LAA
dc.title Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication en_US
dc.type Conference Paper en_US
dc.description.version Author's Original en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2012-09-25T18:53:52Z

Files in this item

Files Size Format View
Au_ALDCVD.pdf 3.784Mb PDF View/Open

This item appears in the following Collection(s)

  • FAS Scholarly Articles [7106]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

Show simple item record

 
 

Search DASH


Advanced Search
 
 

Submitters