Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition
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Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition
| Title: | Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition |
| Author: |
Lee, Sang Woon; Liu, Yiqun; Heo, Jaeyeong; Gordon, Roy Gerald
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Lee, Sang Woon, Yiqun Liu, Jaeyeong Heo and Roy G. Gordon. 2012. Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO\(_3\) heterostructures grown by atomic layer deposition. Nano Letters 12(9): 4775-4783. |
| Full Text & Related Files: |
Lee_CreationControl.pdf (1.573Mb; PDF) 
|
| Abstract: | The formation of a two-dimensional electron gas (2-DEG) using \(SrTiO_3\) (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique at 300°C which is a process compatible with mass production and thereby can provide the realization of potential applications. We found that the amorphous \(LaAlO_3\) (LAO) layer grown by the ALD process can generate 2-DEG \((\sim 1 × 10^{13}/cm^{2})\) with an electron mobility of \(4–5 cm^2/V·s\). A much higher electron mobility was observed at lower temperatures. More remarkably, amorphous \(YAlO_3\) (YAO) and \(Al_2O_3\) layers, which are not polar-perovskite-structured oxides, can create 2-DEG as well. 2-DEG was created by means of the important role of trimethylaluminum, \(Me_3Al\), as a reducing agent for STO during LAO and YAO ALD as well as the \(Al_2O_3\) ALD process at 300°C. The deposited oxide layer also plays an essential role as a catalyst that enables \(Me_3Al\) to reduce the STO. The electrons were localized very near to the STO surface, and the source of carriers was explained based on the oxygen vacancies generated in the STO substrate. |
| Published Version: | doi:10.1021/nl302214x |
| Other Sources: | http://www.chem.harvard.edu/groups/gordon/Create.Control_2D_Electron_Gas_NanoLtrs12,4775-83(2012).pdf |
| Terms of Use: | This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:9716627 |
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