Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition

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Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition

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dc.contributor.author Lee, Sang Woon
dc.contributor.author Liu, Yiqun
dc.contributor.author Heo, Jaeyeong
dc.contributor.author Gordon, Roy Gerald
dc.date.accessioned 2012-10-12T15:16:51Z
dc.date.issued 2012
dc.identifier.citation Lee, Sang Woon, Yiqun Liu, Jaeyeong Heo and Roy G. Gordon. 2012. Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO\(_3\) heterostructures grown by atomic layer deposition. Nano Letters 12(9): 4775-4783. en_US
dc.identifier.issn 1530-6984 en_US
dc.identifier.issn 1530-6992 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:9716627
dc.description.abstract The formation of a two-dimensional electron gas (2-DEG) using \(SrTiO_3\) (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique at 300°C which is a process compatible with mass production and thereby can provide the realization of potential applications. We found that the amorphous \(LaAlO_3\) (LAO) layer grown by the ALD process can generate 2-DEG \((\sim 1 × 10^{13}/cm^{2})\) with an electron mobility of \(4–5 cm^2/V·s\). A much higher electron mobility was observed at lower temperatures. More remarkably, amorphous \(YAlO_3\) (YAO) and \(Al_2O_3\) layers, which are not polar-perovskite-structured oxides, can create 2-DEG as well. 2-DEG was created by means of the important role of trimethylaluminum, \(Me_3Al\), as a reducing agent for STO during LAO and YAO ALD as well as the \(Al_2O_3\) ALD process at 300°C. The deposited oxide layer also plays an essential role as a catalyst that enables \(Me_3Al\) to reduce the STO. The electrons were localized very near to the STO surface, and the source of carriers was explained based on the oxygen vacancies generated in the STO substrate. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher American Chemical Society en_US
dc.relation.isversionof doi:10.1021/nl302214x en_US
dc.relation.hasversion http://www.chem.harvard.edu/groups/gordon/Create.Control_2D_Electron_Gas_NanoLtrs12,4775-83(2012).pdf en_US
dash.license OAP
dc.subject 2-D electron gas en_US
dc.subject amorphous en_US
dc.subject LaAlO\(_3\) en_US
dc.subject Al\(_2\)O\(_3\) en_US
dc.subject SrTiO\(_3\) en_US
dc.subject atomic layer deposition (ALD) en_US
dc.subject oxygen vacancy en_US
dc.title Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Nano Letters en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2012-10-12T15:16:51Z

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  • FAS Scholarly Articles [7106]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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