Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition
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| dc.contributor.author |
Lee, Sang Woon
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| dc.contributor.author |
Liu, Yiqun |
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| dc.contributor.author |
Heo, Jaeyeong |
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| dc.contributor.author |
Gordon, Roy Gerald
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| dc.date.accessioned |
2012-10-12T15:16:51Z |
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| dc.date.issued |
2012 |
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| dc.identifier.citation |
Lee, Sang Woon, Yiqun Liu, Jaeyeong Heo and Roy G. Gordon. 2012. Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO\(_3\) heterostructures grown by atomic layer deposition. Nano Letters 12(9): 4775-4783. |
en_US |
| dc.identifier.issn |
1530-6984 |
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| dc.identifier.issn |
1530-6992 |
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| dc.identifier.uri |
http://nrs.harvard.edu/urn-3:HUL.InstRepos:9716627 |
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| dc.description.abstract |
The formation of a two-dimensional electron gas (2-DEG) using \(SrTiO_3\) (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique at 300°C which is a process compatible with mass production and thereby can provide the realization of potential applications. We found that the amorphous \(LaAlO_3\) (LAO) layer grown by the ALD process can generate 2-DEG \((\sim 1 × 10^{13}/cm^{2})\) with an electron mobility of \(4–5 cm^2/V·s\). A much higher electron mobility was observed at lower temperatures. More remarkably, amorphous \(YAlO_3\) (YAO) and \(Al_2O_3\) layers, which are not polar-perovskite-structured oxides, can create 2-DEG as well. 2-DEG was created by means of the important role of trimethylaluminum, \(Me_3Al\), as a reducing agent for STO during LAO and YAO ALD as well as the \(Al_2O_3\) ALD process at 300°C. The deposited oxide layer also plays an essential role as a catalyst that enables \(Me_3Al\) to reduce the STO. The electrons were localized very near to the STO surface, and the source of carriers was explained based on the oxygen vacancies generated in the STO substrate. |
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| dc.description.sponsorship |
Chemistry and Chemical Biology |
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| dc.language.iso |
en_US |
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| dc.publisher |
American Chemical Society |
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| dc.relation.isversionof |
doi:10.1021/nl302214x |
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| dc.relation.hasversion |
http://www.chem.harvard.edu/groups/gordon/Create.Control_2D_Electron_Gas_NanoLtrs12,4775-83(2012).pdf |
en_US |
| dash.license |
OAP |
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| dc.subject |
2-D electron gas |
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| dc.subject |
amorphous |
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| dc.subject |
LaAlO\(_3\) |
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| dc.subject |
Al\(_2\)O\(_3\) |
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| dc.subject |
SrTiO\(_3\) |
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| dc.subject |
atomic layer deposition (ALD) |
en_US |
| dc.subject |
oxygen vacancy |
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| dc.title |
Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO\(_3\) Heterostructures Grown by Atomic Layer Deposition |
en_US |
| dc.type |
Journal Article |
en_US |
| dc.description.version |
Accepted Manuscript |
en_US |
| dc.relation.journal |
Nano Letters |
en_US |
| dash.depositing.author |
Gordon, Roy Gerald
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| dc.date.available |
2012-10-12T15:16:51Z |
|
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FAS Scholarly Articles [5171]
Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
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