dc.contributor.author | Nijhuis, Christian A. | |
dc.contributor.author | Reus, William F. | |
dc.contributor.author | Whitesides, George M. | |
dc.date.accessioned | 2012-10-31T14:29:59Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Nijhuis, Christian A., William F. Reus and George M. Whitesides. Mechanism of rectification in tunneling junctions based on molecules with asymmetric potential drops. Journal of the American Chemical Society 132(51): 18386-18401. | en_US |
dc.identifier.issn | 0002-7863 | en_US |
dc.identifier.issn | 1520-5126 | en_US |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:9821907 | |
dc.description.abstract | This paper proposes a mechanism for the rectification of current by self-assembled monolayers (SAMs) of alkanethiolates with Fc head groups (SC\(_{11}\)Fc) in SAM-based tunneling junctions with ultra-flat Ag bottom electrodes and liquid metal (Ga\(_2\)O\(_3\)/EGaIn) top electrodes. A systematic physical-organic study based on statistically large numbers of data (N = 300−1000) reached the conclusion that only one energetically accessible molecular orbital (the HOMO of the Fc) is necessary to obtain large rectification ratios \(R \approx 1.0 \times 10^{2} (R = |J(−V)|/|J(V)|\) at \(±1\) V\()\). Values of R are log-normally distributed, with a log-standard deviation of 3.0. The HOMO level has to be positioned spatially asymmetrically inside the junctions (in these experiments, in contact with the Ga\(_2\)O\(_3\)/EGaIn top electrode, and separated from the Ag electrode by the SC\(_{11}\) moiety) and energetically below the Fermi levels of both electrodes to achieve rectification. The HOMO follows the potential of the Fermi level of the Ga\(_2\)O\(_3\)/EGaIn electrode; it overlaps energetically with both Fermi levels of the electrodes only in one direction of bias. | en_US |
dc.description.sponsorship | Chemistry and Chemical Biology | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Chemical Society | en_US |
dc.relation.isversionof | doi:10.1021/ja108311j | en_US |
dc.relation.hasversion | http://gmwgroup.harvard.edu/pubs/pdf/1105.pdf | en_US |
dc.relation.hasversion | http://gmwgroup.unix.fas.harvard.edu/pubs/pdf/1105.pdf | en_US |
dash.license | OAP | |
dc.subject | self-assembled monolayers | en_US |
dc.subject | negative differential resistance | en_US |
dc.subject | unimolecular electronic devices | en_US |
dc.subject | gallium-indium EGaIN | en_US |
dc.subject | electrical rectification | en_US |
dc.subject | hexadecylquinolinium tricyanoquinodimethanide | en_US |
dc.subject | alkanethiol monolayers | en_US |
dc.subject | organic materials | en_US |
dc.subject | charge-transport | en_US |
dc.subject | metal junction | en_US |
dc.title | Mechanism of Rectification in Tunneling Junctions Based on Molecules with Asymmetric Potential Drops | en_US |
dc.type | Journal Article | en_US |
dc.description.version | Accepted Manuscript | en_US |
dc.relation.journal | Journal of the American Chemical Society | en_US |
dash.depositing.author | Whitesides, George M. | |
dc.date.available | 2012-10-31T14:29:59Z | |
dc.identifier.doi | 10.1021/ja108311j | * |
dash.contributor.affiliated | Whitesides, George | |
dc.identifier.orcid | 0000-0001-9451-2442 | |