Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions

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Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions

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dc.contributor.author Nijhuis, Christian A.
dc.contributor.author Reus, William F.
dc.contributor.author Barber, Jabulani Randall
dc.contributor.author Dickey, Michael D.
dc.contributor.author Whitesides, George M.
dc.date.accessioned 2012-11-13T19:52:27Z
dc.date.issued 2010
dc.identifier.citation Nijhuis, Christian A., William F. Reus, Jabulani R. Barber, Michael D. Dickey, and George M. Whitesides. 2010. Charge transport and rectification in arrays of SAM-based tunneling junctions. Nano Letters 10(9): 3611-3619. en_US
dc.identifier.issn 1530-6984 en_US
dc.identifier.issn 1530-6992 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:9896817
dc.description.abstract This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70−90%). The junctions examined incorporated SAMs of alkanethiolates having ferrocene termini (11-(ferrocenyl)-1-undecanethiol, SC\(_{11}\)Fc); these junctions rectify currents with large rectification ratios (R), the majority of which fall within the range of 90−180. These values are larger than expected (theory predicts R ≤ 20) and are larger than previous experimental measurements. SAMs of n-alkanethiolates without the Fc groups (SC\(_{n−1}\)CH\(_3\), with n = 12, 14, 16, or 18) do not rectify (R ranged from 1.0 to 5.0). These arrays enable the measurement of the electrical characteristics of the junctions as a function of chemical structure, voltage, and temperature over the range of 110−293 K, with statistically large numbers of data (N = 300−800). The mechanism of rectification with Fc-terminated SAMs seems to be charge transport processes that change with the polarity of bias: from tunneling (at one bias) to hopping combined with tunneling (at the opposite bias). en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher American Chemical Society en_US
dc.relation.isversionof doi:10.1021/nl101918m en_US
dc.relation.hasversion http://gmwgroup.harvard.edu/pubs/pdf/1093.pdf en_US
dc.relation.hasversion http://gmwgroup.unix.fas.harvard.edu/pubs/pdf/1093.pdf en_US
dash.license OAP
dc.subject nanoelectronics en_US
dc.subject molecular electronics en_US
dc.subject charge transport en_US
dc.subject self-assembled monolayers en_US
dc.subject rectification en_US
dc.subject charge transfer en_US
dc.title Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Nano Letters en_US
dash.depositing.author Whitesides, George M.
dc.date.available 2012-11-13T19:52:27Z

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  • FAS Scholarly Articles [7106]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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