Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions

Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions

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Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions

dc.contributor.author	Nijhuis, Christian A.
dc.contributor.author	Reus, William F.
dc.contributor.author	Barber, Jabulani Randall
dc.contributor.author	Dickey, Michael D.
dc.contributor.author	Whitesides, George M.
dc.date.accessioned	2012-11-13T19:52:27Z
dc.date.issued	2010
dc.identifier.citation	Nijhuis, Christian A., William F. Reus, Jabulani R. Barber, Michael D. Dickey, and George M. Whitesides. 2010. Charge transport and rectification in arrays of SAM-based tunneling junctions. Nano Letters 10(9): 3611-3619.	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.issn	1530-6992	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:9896817
dc.description.abstract	This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70−90%). The junctions examined incorporated SAMs of alkanethiolates having ferrocene termini (11-(ferrocenyl)-1-undecanethiol, SC\(_{11}\)Fc); these junctions rectify currents with large rectification ratios (R), the majority of which fall within the range of 90−180. These values are larger than expected (theory predicts R ≤ 20) and are larger than previous experimental measurements. SAMs of n-alkanethiolates without the Fc groups (SC\(_{n−1}\)CH\(_3\), with n = 12, 14, 16, or 18) do not rectify (R ranged from 1.0 to 5.0). These arrays enable the measurement of the electrical characteristics of the junctions as a function of chemical structure, voltage, and temperature over the range of 110−293 K, with statistically large numbers of data (N = 300−800). The mechanism of rectification with Fc-terminated SAMs seems to be charge transport processes that change with the polarity of bias: from tunneling (at one bias) to hopping combined with tunneling (at the opposite bias).	en_US
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.language.iso	en_US	en_US
dc.publisher	American Chemical Society	en_US
dc.relation.isversionof	doi:10.1021/nl101918m	en_US
dc.relation.hasversion	http://gmwgroup.harvard.edu/pubs/pdf/1093.pdf	en_US
dc.relation.hasversion	http://gmwgroup.unix.fas.harvard.edu/pubs/pdf/1093.pdf	en_US
dash.license	OAP
dc.subject	nanoelectronics	en_US
dc.subject	molecular electronics	en_US
dc.subject	charge transport	en_US
dc.subject	self-assembled monolayers	en_US
dc.subject	rectification	en_US
dc.subject	charge transfer	en_US
dc.title	Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions	en_US
dc.type	Journal Article	en_US
dc.description.version	Accepted Manuscript	en_US
dc.relation.journal	Nano Letters	en_US
dash.depositing.author	Whitesides, George M.
dc.date.available	2012-11-13T19:52:27Z