dc.contributor.author | Nijhuis, Christian A. | |
dc.contributor.author | Reus, William F. | |
dc.contributor.author | Barber, Jabulani Randall | |
dc.contributor.author | Dickey, Michael D. | |
dc.contributor.author | Whitesides, George M. | |
dc.date.accessioned | 2012-11-13T19:52:27Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Nijhuis, Christian A., William F. Reus, Jabulani R. Barber, Michael D. Dickey, and George M. Whitesides. 2010. Charge transport and rectification in arrays of SAM-based tunneling junctions. Nano Letters 10(9): 3611-3619. | en_US |
dc.identifier.issn | 1530-6984 | en_US |
dc.identifier.issn | 1530-6992 | en_US |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:9896817 | |
dc.description.abstract | This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70−90%). The junctions examined incorporated SAMs of alkanethiolates having ferrocene termini (11-(ferrocenyl)-1-undecanethiol, SC\(_{11}\)Fc); these junctions rectify currents with large rectification ratios (R), the majority of which fall within the range of 90−180. These values are larger than expected (theory predicts R ≤ 20) and are larger than previous experimental measurements. SAMs of n-alkanethiolates without the Fc groups (SC\(_{n−1}\)CH\(_3\), with n = 12, 14, 16, or 18) do not rectify (R ranged from 1.0 to 5.0). These arrays enable the measurement of the electrical characteristics of the junctions as a function of chemical structure, voltage, and temperature over the range of 110−293 K, with statistically large numbers of data (N = 300−800). The mechanism of rectification with Fc-terminated SAMs seems to be charge transport processes that change with the polarity of bias: from tunneling (at one bias) to hopping combined with tunneling (at the opposite bias). | en_US |
dc.description.sponsorship | Chemistry and Chemical Biology | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Chemical Society | en_US |
dc.relation.isversionof | doi:10.1021/nl101918m | en_US |
dc.relation.hasversion | http://gmwgroup.harvard.edu/pubs/pdf/1093.pdf | en_US |
dc.relation.hasversion | http://gmwgroup.unix.fas.harvard.edu/pubs/pdf/1093.pdf | en_US |
dash.license | OAP | |
dc.subject | nanoelectronics | en_US |
dc.subject | molecular electronics | en_US |
dc.subject | charge transport | en_US |
dc.subject | self-assembled monolayers | en_US |
dc.subject | rectification | en_US |
dc.subject | charge transfer | en_US |
dc.title | Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions | en_US |
dc.type | Journal Article | en_US |
dc.description.version | Accepted Manuscript | en_US |
dc.relation.journal | Nano Letters | en_US |
dash.depositing.author | Whitesides, George M. | |
dc.date.available | 2012-11-13T19:52:27Z | |
dc.identifier.doi | 10.1021/nl101918m | * |
dash.contributor.affiliated | Barber, Jabulani Randall | |
dash.contributor.affiliated | Whitesides, George | |
dc.identifier.orcid | 0000-0001-9451-2442 | |