# Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

 Title: Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects Author: Bhandari, Harish B.; Yang, Jing; Kim, Hoon; Lin, Youbo; Gordon, Roy Gerald; Wang, Qing Min; Lehn, Jean-Sebastien; Li, Huazhi; Shenai, Deo Note: Order does not necessarily reflect citation order of authors. Citation: Bhandari, Harish B., Jing Yang, Hoon Kim, Youbo Lin, Roy G. Gordon, Qing Min Qang, Jean-Sebastien Lehn, Huazhi Li, Deo Shenai. 2012. ECS Journal of Solid State Science and Technology 1(5): N79-N84. Full Text & Related Files: CVD_Cobalt.pdf (942.5Kb; PDF) Abstract: An interlayer of face centered cubic (fcc) Co4N has demonstrated significant improvements in adhesion between copper and diffusion barrier layers. This fcc phase of Co4N was prepared by chemical vapor deposition (CVD) using bis(N-tert-butyl-N′-ethyl-propionamidinato)cobalt(II) and a reactant mixture of NH3 and H2 at substrate temperatures from 100 to 180°C. The Co/N atomic ratio and the phase of cobalt nitride film can be modified by adjusting the ratio of NH3 and H2 in the gas feedstock. The cobalt nitride films prepared by CVD are smooth, highly conformal, and stable against intermixing with copper up to at least 400°C. This fcc cobalt nitride material has very strong adhesion to copper due to the small lattice mismatch (−1 to 2%) between $$fcc-Co_4N$$ and fcc Cu. Copper wires should be stabilized against failure by electromigration when fcc cobalt nitride interlayers are placed between the copper and surrounding diffusion barriers. Published Version: doi:10.1149/2.005205jss Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9925419