Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

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Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

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dc.contributor.author Bhandari, Harish B.
dc.contributor.author Yang, Jing
dc.contributor.author Kim, Hoon
dc.contributor.author Lin, Youbo
dc.contributor.author Gordon, Roy Gerald
dc.contributor.author Wang, Qing Min
dc.contributor.author Lehn, Jean-Sebastien
dc.contributor.author Li, Huazhi
dc.contributor.author Shenai, Deo
dc.date.accessioned 2012-11-20T17:16:57Z
dc.date.issued 2012
dc.identifier.citation Bhandari, Harish B., Jing Yang, Hoon Kim, Youbo Lin, Roy G. Gordon, Qing Min Qang, Jean-Sebastien Lehn, Huazhi Li, Deo Shenai. 2012. ECS Journal of Solid State Science and Technology 1(5): N79-N84. en_US
dc.identifier.issn 2162-8769 en_US
dc.identifier.issn 2162-8777 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:9925419
dc.description.abstract An interlayer of face centered cubic (fcc) Co4N has demonstrated significant improvements in adhesion between copper and diffusion barrier layers. This fcc phase of Co4N was prepared by chemical vapor deposition (CVD) using bis(N-tert-butyl-N′-ethyl-propionamidinato)cobalt(II) and a reactant mixture of NH3 and H2 at substrate temperatures from 100 to 180°C. The Co/N atomic ratio and the phase of cobalt nitride film can be modified by adjusting the ratio of NH3 and H2 in the gas feedstock. The cobalt nitride films prepared by CVD are smooth, highly conformal, and stable against intermixing with copper up to at least 400°C. This fcc cobalt nitride material has very strong adhesion to copper due to the small lattice mismatch (−1 to 2%) between \(fcc-Co_4N\) and fcc Cu. Copper wires should be stabilized against failure by electromigration when fcc cobalt nitride interlayers are placed between the copper and surrounding diffusion barriers. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher Electrochemical Society en_US
dc.relation.isversionof doi:10.1149/2.005205jss en_US
dash.license LAA
dc.subject dielectric science and materials en_US
dc.title Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal ECS Journal of Solid State Science and Technology en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2012-11-20T17:16:57Z

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  • FAS Scholarly Articles [7105]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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