Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors

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Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors

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Title: Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors
Author: Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy Gerald

Note: Order does not necessarily reflect citation order of authors.

Citation: Heo, Jaeyeong, Sang Bok Kim, and Roy G. Gordon. 2012. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors. Applied Physics Letters 101(11): 113507.
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Abstract: Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD). The films maintained their amorphous character up to temperatures over 500 \(^{\circ}\)C. The highest field effect mobility was ~13 \(cm^2/V^.s\) with on-to-off ratios of drain current ~10\(^9\)-10\(^{10}\). The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 \(^{\circ}\)C showed better transistor properties than those grown at 120 \(^{\circ}\)C. Channels with higher zinc to tin ratio (~3-4) also performed better than ones with lower ratios (~1-3).
Published Version: doi:10.1063/1.4752727
Other Sources: http://www.chem.harvard.edu/groups/gordon/Appl_Phys_Lett_2012_Heo_9.2012.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9961225

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  • FAS Scholarly Articles [7588]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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