Photoconductivity in High Purity, Semiconducting CdF2

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Photoconductivity in High Purity, Semiconducting CdF2

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dc.contributor.author Feldman, Bernard J.
dc.contributor.author Pershan, Peter S.
dc.date.accessioned 2012-11-28T18:47:01Z
dc.date.issued 1972
dc.identifier.citation Feldman, Bernard J., and Peter S. Pershan. 1972. Photoconductivity in high purity, semiconducting CdF2. Solid State Communications 11(9): 1131-1134. en_US
dc.identifier.issn 0038-1098 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:9962001
dc.description.abstract The photoconductivity spectra of high purity, semiconducting CdF2, containing low concentrations of rare-earth donors, are interpreted in terms of a shallow trap \(1260 \pm 100cm^{-1} \) below the bottom of the conduction band and an excited bound state \(1030cm^{-1} \) above the ground state. en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher Elsevier en_US
dc.relation.isversionof doi:10.1016/0038-1098(72)90808-3 en_US
dash.license META_ONLY
dc.title Photoconductivity in High Purity, Semiconducting CdF2 en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal Solid State Communications en_US
dash.depositing.author Pershan, Peter S.
dash.embargo.until 10000-01-01

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  • FAS Scholarly Articles [7374]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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