Low Temperature Epitaxial Growth of High Permittivity Rutile \(TiO_2\) on \(SnO_2\)

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Low Temperature Epitaxial Growth of High Permittivity Rutile \(TiO_2\) on \(SnO_2\)

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Title: Low Temperature Epitaxial Growth of High Permittivity Rutile \(TiO_2\) on \(SnO_2\)
Author: Wang, Hongtao; Xu, Sheng; Gordon, Roy Gerald

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Citation: Wang, Hongtao, Sheng Xu, and Roy G. Gordon. 2010. Low temperature epitaxial growth of high permittivity rutile \(TiO_2\) on \(SnO_2\). Electrochemical and Solid-State Letters 13(9): G75-G78.
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Abstract: Thin films of high dielectric constant \(\kappa \sim 68\) rutile phase titanium dioxide \(TiO_2\) were grown epitaxially on tin dioxide \(SnO_2\) substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature \({250^\circ C}\) was used with titanium(IV) tetrakis(isopropoxide) and hydrogen peroxide \(H_2O_2\) as precursors. The rutile \(TiO_2\) thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase \(SnO_2\) substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces.
Published Version: doi:10.1149/1.3457485
Other Sources: http://www.chem.harvard.edu/groups/gordon/papers/TiO2_rutile_epitaxy_on_SnO2_ESL13,G75(2010).pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9962002

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  • FAS Scholarly Articles [6463]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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