Low Temperature Epitaxial Growth of High Permittivity Rutile $$TiO_2$$ on $$SnO_2$$

 Title: Low Temperature Epitaxial Growth of High Permittivity Rutile $$TiO_2$$ on $$SnO_2$$ Author: Wang, Hongtao; Xu, Sheng; Gordon, Roy Gerald Note: Order does not necessarily reflect citation order of authors. Citation: Wang, Hongtao, Sheng Xu, and Roy G. Gordon. 2010. Low temperature epitaxial growth of high permittivity rutile $$TiO_2$$ on $$SnO_2$$. Electrochemical and Solid-State Letters 13(9): G75-G78. Full Text & Related Files: Wang_LowTemperature.pdf (637.5Kb; PDF) Abstract: Thin films of high dielectric constant $$\kappa \sim 68$$ rutile phase titanium dioxide $$TiO_2$$ were grown epitaxially on tin dioxide $$SnO_2$$ substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature $${250^\circ C}$$ was used with titanium(IV) tetrakis(isopropoxide) and hydrogen peroxide $$H_2O_2$$ as precursors. The rutile $$TiO_2$$ thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase $$SnO_2$$ substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces. Published Version: doi:10.1149/1.3457485 Other Sources: http://www.chem.harvard.edu/groups/gordon/papers/TiO2_rutile_epitaxy_on_SnO2_ESL13,G75(2010).pdf Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:9962002

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Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University