Browsing by Author "Wang, Xinwei"

Now showing items 1-6 of 6

    • Applications of Vapor Deposition in Microelectronics and Dye-Sensitized Solar Cells 

      Wang, Xinwei (2012-10-31)
      Over the past decades, vapor deposition of thin films has gained wide interest in both industry and academia, and a variety of its applications have been demonstrated. As one of the most promising vapor deposition techniques, ...

    • Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices 

      Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomás; Gordon, Roy Gerald (American Institute of Physics, 2012)
      Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ...

    • Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition 

      Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D.; Gordon, Roy Gerald (American Chemical Society (ACS), 2016)
      We demonstrate for the first time that a singlecrystalline epitaxial MgxCa1−xO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the ...

    • III-V 4D Transistors 

      Gu, J.J.; Wang, Xinwei; Shao, J.; Neal, A.T.; Manfra, M.J.; Gordon, Roy Gerald; Ye, P.D. (Institute of Electrical and Electronics Engineers, 2012)
      We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance ...

    • Smooth, Low-Resistance, Pinhole-free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition 

      Wang, Xinwei; Gordon, Roy Gerald (Electrochemical Society, 2013)
      Ruthenium (Ru) thin films were deposited by pulsed chemical vapor deposition with precursors bis(N,N′-di-tert-butylacetamidinato)ruthenium(II)dicarbonyl, ammonia and hydrogen. Low-resistance polycrystalline Ru films with ...

    • Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–Insulator Transition Characteristics 

      Cui, Yanjie; Wang, Xinwei; Zhou, You; Gordon, Roy Gerald; Ramanathan, Shriram (Elsevier, 2012)
      We report on growth and physical properties of vanadium dioxide \((VO_2)\) films on model conducting oxide underlayers (Nb-doped \(SrTiO_3\) and \(RuO_2\) buffered \(TiO_2\) single crystals). The \(VO_2\) films, synthesized ...