Browsing by Author "Feng, Jun"
Now showing items 1-6 of 6
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Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation
Feng, Jun; Gong, Xian; Lou, Xiabing; Gordon, Roy Gerald (American Chemical Society (ACS), 2017)In advanced microelectronics, precise design of liner and capping layers become critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate ... -
Direct-liquid-evaporation chemical vapor deposition of smooth, highly conformal cobalt and cobalt nitride thin films
Yang, Jing; Li, Kecheng; Feng, Jun; Gordon, Roy Gerald (Royal Society of Chemistry (RSC), 2015) -
Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D.; Gordon, Roy Gerald (American Chemical Society (ACS), 2016)We demonstrate for the first time that a singlecrystalline epitaxial MgxCa1−xO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the ... -
Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography
Li, Kecheng; Feng, Jun; Kwak, Junkeun; Yang, Jing; Gordon, Roy Gerald (AIP Publishing, 2017)Low-resistance and uniform contacts are needed for modern 3-D silicon transistors. The formation of high-quality and conformal nickel silicide at the interface between silicon and metal contacts is a possible solution. ... -
Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness
Yang, Jing; Feng, Jun; Li, Kecheng; Bhandari, Harish; Li, Zhefeng; Gordon, Roy Gerald (The Electrochemical Society, 2017)The formation of smooth, conformal cobalt disilicide (CoSi2) without facets or voids is critical for microelectronic device reliability owing to the ultra-shallow contact areas. Here we demonstrate the formation of smooth ... -
Vapor Deposition of Copper-Manganese Interconnects
Gordon, Roy Gerald; Feng, Jun; Li, Kecheng; Gong, Xian (IEEE, 2016)Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very ...