Now showing items 1-20 of 171

    • The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics 

      Aziz, Michael; Sabin, Paul C.; Lu, Guo-Quan (American Physical Society, 1991)
      The solid-phase epitaxial-growth rate of crystalline Si from the amorphous Si on the tensile side is greater than on the compressive side of elastically bent wafers, in marked contrast to the behavior observed under ...
    • Activation Volume for Arsenic Diffusion in Germanium 

      Mitha, Salman; Aziz, Michael; Schiferl, David; Poker, David B. (American Institute of Physics, 1996)
      We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion-implanted samples were carried out in a high-temperature diamond anvil cell using fluid argon as a clean, hydrostatic pressure medium. ...
    • Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07 

      Zhao, Yuechao; Aziz, Michael; Zangenberg, Nikolaj R.; Larsen, Arne Nylandsted (American Institute of Physics, 2005)
      The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si<sub>0.93</sub>Ge<sub>0.07</sub> and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, ...
    • Alkaline quinone flow battery 

      Lin, Kaixiang; Chen, Qing; Gerhardt, Michael; Tong, Liuchuan; Kim, Sang Bok; Eisenach, Louise Ann; Valle, Alvaro West; Hardee, D.; Gordon, Roy Gerald; Aziz, Michael J.; Marshak, M (American Association for the Advancement of Science (AAAS), 2015)
      Storage of photovoltaic and wind electricity in batteries could solve the mismatch problem between the intermittent supply of these renewable resources and variable demand. Flow batteries permit more economical long-duration ...
    • The Amorphous-Crystal Interface in Silicon: a Tight-Binding Simulation 

      Bernstein, Noam; Aziz, Michael; Kaxiras, Efthimios (The American Physical Society, 1998)
      The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. ...
    • Anomalous Diffusion of Fe in Liquid Al Measured by the Pulsed Laser Technique 

      Isono, N.; Smith, Patrick M.; Turnbull, David; Aziz, Michael (Springer, 1996)
      The diffusivity of Fe and Cu in liquid Al was measured by using a nanosecond-duration pulsed laser to melt thin Al films ion implanted with solute. The thin film geometry eliminates convection in the melt during the ...
    • Aperiodic Stepwise Growth Model for the Velocity and Orientation Dependence of Solute Trapping 

      Aziz, Michael; Goldman, L.M. (Materials Research Society, 1987)
      An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient <i>k</i> during rapid solidification is developed in detail. Starting with a simple stepwise growth model, ...
    • Application of Onsager's Reciprocity Relations to Interface Motion During Phase Transformations. 

      Kaplan, Theodore; Aziz, Michael; Gray, Leonard J. (Journal of Chemical Physics, 1989)
      A number of theories have been developed for the kinetics of steady-state interface motion during a phase transformation. One requirement of such theories is that they satisfy Onsager’s reciprocity relations for coupled ...
    • Asymmetric Melting and Freezing Kinetics in Silicon. 

      Tsao, Jeff Y.; Aziz, Michael; Thompson, Michael O.; Peercy, Paul S. (American Physical Society, 1986)
      We report measurements of the melting velocity of amorphous Si relative to that of (100) crystalline Si. These measurements permit the first severe experimental test of theories describing highly nonequilibrium freezing ...
    • Atomistic Features of the Amorphous-Crystal Interface in Silicon 

      Kaxiras, Efthimios; Bernstien, Noam; Aziz, Michael (Springer Verlag, 1998)
      We simulate the amorphous-crystal interface in silicon using a combination of interatomic potential molecular-dynamics and tight-binding conjugate-gradient relaxation. The samples we create have high quality crystalline ...
    • An Atomistic Model of Solute Trapping 

      Aziz, Michael J. (National Bureau of Standards, 1982)
    • Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si 

      Yang, W.; Akey, Austin; Smillie, L. A.; Mailoa, J. P.; Johnson, B. C.; McCallum, J. C.; Macdonald, D.; Buonassisi, T.; Aziz, Michael J.; Williams, J. S. (American Physical Society (APS), 2017)
      Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a ...
    • Benzoquinone-Hydroquinone Couple for Flow Battery 

      Nawar, Saraf; Huskinson, Brian; Aziz, Michael J. (Cambridge University Press (CUP), 2013)
      At present, there is an ongoing search for approaches toward the storage of energy from intermittent renewable sources like wind and solar. Flow batteries have gained attention due to their potential viability for inexpensive ...
    • Bromine-free quinone flow battery chemistries 

      Marshak, Michael; Aziz, Michael J.; Gordon, Roy Gerald; Aspuru-Guzik, Alan; Hogan, William W. (American Chemical Society, 2015)
    • Comparison of Capacity Retention Rates During Cycling of Quinone-Bromide Flow Batteries 

      Gerhardt, Michael; Beh, Eugene; Tong, Liuchuan; Gordon, Roy Gerald; Aziz, Michael J. (Cambridge University Press (CUP), 2016)
      We use cyclic charge-discharge experiments to evaluate the capacity retention rates of two quinone-bromide flow batteries (QBFBs). These aqueous QBFBs use a negative electrolyte containing either anthraquinone-2,7-disulfonic ...
    • Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE 

      Leonard, John P.; Shin, Byungha; McCamy, James W.; Aziz, Michael (Materials Research Society, 2003)
      Differences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique ...
    • Comparison of Mechanical Properties of Ni[sub]3Al Thin Films in Disordered FCC and Ordered L1[sub]2 Phases 

      Huang, Yonggang; Aziz, Michael; Hutchinson, John; Evans, Anthony G.; Saha, R.; Nix, Wiliam D. (Elsevier Science B.V., Amsterdam, 2001)
      We report the results of several experiments isolating the effect of long-range order on mechanical properties of intermetallic compounds. Kinetically disordered FCC Ni<sub>3</sub>Al (Ni 76%) thin films were produced by ...
    • Comparison of Molecular Dynamics and Binary Collision Approximation Simulations for Atom Displacement Analysis 

      Bukonte, L.; Djurabekova, F.; Samela, J.; Nordlund, K.; Norris, S. A.; Aziz, Michael J. (Elsevier, 2013)
      Molecular dynamics (MD) and binary collision approximation (BCA) computer simulations are employed to study surface damage by single ion impacts. The predictions of BCA and MD simulations of displacement cascades in amorphous ...
    • Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy 

      Shin, Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael (American Institute of Physics, 2005)
      Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD) Ultra-High Vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare ...
    • Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon 

      Crouch, C. H.; Carey, J. E.; Warrender, J. M.; Aziz, Michael J.; Mazur, Eric; Genin, F. Y. (American Institute of Physics, 2004)
      We compare the optical properties, chemical composition, and crystallinity of silicon microstructures formed in the presence of SF6 by femtosecond laser irradiation and by nanosecond laser irradiation. In spite of very ...