Browsing by Author "Au, Yeung"
Now showing items 1-5 of 5
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Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication
Au, Yeung Billy; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy Gerald (2011) -
Chemical Vapor Deposition (CVD) of Manganese Self-Aligned Diffusion Barriers for Cu Interconnections in Microelectronics
Gordon, Roy Gerald; Kim, Hoon; Au, Yeung Billy; Wang, Hongtao; Bhandari, Harish B; Liu, Yiqun; Lee, Don K; Lin, Youbo (Materials Research Society, 2009)Barriers to prevent diffusion of copper, oxygen and water vapor were formed by CVD using a manganese precursor vapor that reacts with silica surfaces. The manganese metal penetrates only a few nanometers into the silica ... -
Chemical Vapor Deposition of Thin Film Materials for Copper Interconnects in Microelectronics
Au, Yeung Billy (2012-07-24)The packing density of microelectronic devices has increased exponentially over the past four decades. Continuous enhancements in device performance and functionality have been achieved by the introduction of new materials ... -
Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers
Au, Yeung Billy; Lin, Youbo; Gordon, Roy Gerald (Electrochemical Society, 2011)We present a process for the void-free filling of sub-100 nm trenches with copper or copper-manganese alloy by chemical vapor deposition (CVD). Conformally deposited manganese nitride serves as an underlayer that initially ... -
Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)
Au, Yeung; Min Wang, Qing; Li, Huazhi; Lehn, Jean-Sebastien M.; Shenai, Deo V.; Gordon, Roy Gerald (Electrochemical Society, 2012)Through-silicon vias (TSV) will speed up interconnections between chips. Manufacturable and cost-effective TSVs will allow faster computer systems. In this paper, we report the successful formation of seed layers for plating ...