Browsing by Author "Li, Kecheng"
Now showing items 1-5 of 5
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Direct Liquid Evaporation Chemical Vapor Deposition(DLE-CVD) of Nickel, Manganese and Copper-Based Thin Films for Interconnects in Three-Dimensional Microelectronic Systems
Li, Kecheng (2016-05-19)Electrical interconnects are an intrinsic part of any electronic system. These interconnects have to perform reliably under a wide range of environmental conditions and survive stresses induced from thermal, mechanical, ... -
Direct-liquid-evaporation chemical vapor deposition of smooth, highly conformal cobalt and cobalt nitride thin films
Yang, Jing; Li, Kecheng; Feng, Jun; Gordon, Roy Gerald (Royal Society of Chemistry (RSC), 2015) -
Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography
Li, Kecheng; Feng, Jun; Kwak, Junkeun; Yang, Jing; Gordon, Roy Gerald (AIP Publishing, 2017)Low-resistance and uniform contacts are needed for modern 3-D silicon transistors. The formation of high-quality and conformal nickel silicide at the interface between silicon and metal contacts is a possible solution. ... -
Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness
Yang, Jing; Feng, Jun; Li, Kecheng; Bhandari, Harish; Li, Zhefeng; Gordon, Roy Gerald (The Electrochemical Society, 2017)The formation of smooth, conformal cobalt disilicide (CoSi2) without facets or voids is critical for microelectronic device reliability owing to the ultra-shallow contact areas. Here we demonstrate the formation of smooth ... -
Vapor Deposition of Copper-Manganese Interconnects
Gordon, Roy Gerald; Feng, Jun; Li, Kecheng; Gong, Xian (IEEE, 2016)Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very ...