Browsing by Author "Gordon, Roy"
Now showing items 1-20 of 132
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Advanced atomic layer deposition and epitaxy processes
Gordon, Roy Gerald; Lou, Xiabing; Kim, Sang Bok (2015)Atomic Layer Deposition (ALD) was used to grow single-crystalline epitaxial layers of high-k dielectric oxides on semiconductors with remarkably few defects or traps at the interfaces. La2O3 on GaAs(111) produced record-breaking ... -
ALD Growth of MgxCa1xO on GaN and Its Band Offset Analysis
Gong, Xian; Lou, Xiabing; Kim, Sang Bok; Gordon, Roy (American Chemical Society (ACS), 2021-02-08)Atomic layer deposition (ALD) processes were developed for growing MgO and CaO on GaN substrates using a home-built ALD reactor with amidinate-based precursors. An optimal deposition condition was then determined to deposit ... -
ALD of Manganese Silicate
Gordon, Roy Gerald; Sun, Lu; Chen, Qiang; Park, Jin-Seong; Kim, Sang Bok (2015) -
ALD of Tin Monosulfide, SnS
Sinsermsuksakul, Prasert; Hock, Adam S.; Gordon, Roy Gerald (AVS, 2011) -
AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric
Zhou, Hongchao; Lou, Xiabing; Chabak, Kelson; Gordon, Roy Gerald; Ye, Peide (2016-10-13) -
Alkaline Benzoquinone Aqueous Flow Battery for Large-Scale Storage of Electrical Energy
Yang, Zhengjin; Tong, Liuchuan; Tabor, Daniel; Beh, Eugene; Goulet, Marc-Antoni; De Porcellinis, Diana; Aspuru-Guzik, Alán; Gordon, Roy; Aziz, MichaelAn aqueous flow battery based on low-cost, nonflammable, noncorrosive, and earth-abundant elements is introduced. During charging, electrons are stored in a concentrated water solution of 2,5-dihydroxy-1,4-benzoquinone, ... -
Alkaline quinone flow battery
Lin, Kaixiang; Chen, Qing; Gerhardt, Michael; Tong, Liuchuan; Kim, Sang Bok; Eisenach, Louise Ann; Valle, Alvaro West; Hardee, D.; Gordon, Roy Gerald; Aziz, Michael J.; Marshak, M (American Association for the Advancement of Science (AAAS), 2015)Storage of photovoltaic and wind electricity in batteries could solve the mismatch problem between the intermittent supply of these renewable resources and variable demand. Flow batteries permit more economical long-duration ... -
Alkaline Quinone Flow Battery with Long Lifetime at pH 12
Kwabe, David G.; Ji, Yunlong; Lin, Kaixiang; Kerr, Emily F.; Goulet, Marc-Antoni; De Porcellinis, Diana; Tabor, Daniel P.; Pollack, Daniel A.; Aspuru-Guzik, Alán; Gordon, Roy; Aziz, Michael (Elsevier BV, 2018-09)We demonstrate a long-lifetime, aqueous redox-flow battery that can operate at a pH as low as 12 while maintaining an open-circuit voltage of over 1 V. We functionalized 2,6-dihydroxyanthraquinone (2,6-DHAQ) with highly ... -
Antimony-doped Tin(II) Sulfide Thin Films
Sinsermsuksakul, Prasert; Chakraborty, Rupak; Kim, Sang Bok; Heald, Steven; Buonassisi, Tonio; Gordon, Roy Gerald (American Chemical Society, 2012-12-07)Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ... -
Applications of Vapor Deposition in Microelectronics and Dye-Sensitized Solar Cells
Wang, Xinwei (2012-10-31)Over the past decades, vapor deposition of thin films has gained wide interest in both industry and academia, and a variety of its applications have been demonstrated. As one of the most promising vapor deposition techniques, ... -
Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy Gerald (American Institute of Physics, 2012)Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD). The films maintained their amorphous character up to temperatures over 500 \(^{\circ}\)C. The highest ... -
Atomic layer depositied Indium oxy-sulfide on CZT(S,Se) absorbers
Jayaraman, Ashwin N Kr; Kim, Sang Bok; Gordon, Roy Gerald (2015) -
Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication
Au, Yeung Billy; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy Gerald (2011) -
Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomás; Gordon, Roy Gerald (American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ... -
Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
Park, Helen Hejin; Jayaraman, Ashwin N Kr; Heasley, Rachel Lenox; Yang, Chuanxi; Hartle, Lauren Ann; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy Gerald (AIP Publishing, 2014)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to ... -
Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage
Chua, Danny; Kim, Sang Bok; Sinsermsuksakul, Prasert; Gordon, Roy (AIP Publishing, 2019-05-27)Tin germanium oxide, (Sn,Ge)O2, films were prepared using atomic layer deposition and tailored to SnS absorber layer by incorporating various amounts of germanium into tin oxide to adjust band alignments at the interfaces ... -
Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy Gerald; Lehn, Jean-Sébastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V. (Electrochemical Society, 2009)Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited ... -
Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor
Wang, Hongtao; Gordon, Roy Gerald; Alvis, Roger; Ulfig, Robert M. (John Wiley & Sons, 2009-10-14)Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure ... -
Atomic Layer Deposition of Tin Monosulfide Thin Films
Sinsermsuksakul, Prasert; Heo, Jae Yeong; Noh, Wontae; Hock, Adam S.; Gordon, Roy Gerald (Wiley-VCH, 2011)Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate ... -
Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H2S
Kim, Sang Bok; Zhao, Xizhu; Davis, Luke M.; Jayaraman, Ashwin; Yang, Chuanxi; Gordon, Roy (American Chemical Society (ACS), 2019-11-13)The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor deposition (CVD) and ...