Browsing by Author "Gordon, Roy"
Now showing items 1-20 of 102
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Advanced atomic layer deposition and epitaxy processes
Gordon, Roy Gerald; Lou, Xiabing; Kim, Sang Bok (2015)Atomic Layer Deposition (ALD) was used to grow single-crystalline epitaxial layers of high-k dielectric oxides on semiconductors with remarkably few defects or traps at the interfaces. La2O3 on GaAs(111) produced record-breaking ... -
ALD of Manganese Silicate
Gordon, Roy Gerald; Sun, Lu; Chen, Qiang; Park, Jin-Seong; Kim, Sang Bok (2015) -
ALD of Tin Monosulfide, SnS
Sinsermsuksakul, Prasert; Hock, Adam S.; Gordon, Roy Gerald (AVS, 2011) -
AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric
Zhou, Hongchao; Lou, Xiabing; Chabak, Kelson; Gordon, Roy Gerald; Ye, Peide (2016-10-13) -
Alkaline quinone flow battery
Lin, Kaixiang; Chen, Qing; Gerhardt, Michael; Tong, Liuchuan; Kim, Sang Bok; Eisenach, Louise Ann; Valle, Alvaro West; Hardee, D.; Gordon, Roy Gerald; Aziz, Michael J.; Marshak, M (American Association for the Advancement of Science (AAAS), 2015)Storage of photovoltaic and wind electricity in batteries could solve the mismatch problem between the intermittent supply of these renewable resources and variable demand. Flow batteries permit more economical long-duration ... -
Antimony-doped Tin(II) Sulfide Thin Films
Sinsermsuksakul, Prasert; Chakraborty, Rupak; Kim, Sang Bok; Heald, Steven; Buonassisi, Tonio; Gordon, Roy Gerald (American Chemical Society, 2012-12-07)Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ... -
Applications of Vapor Deposition in Microelectronics and Dye-Sensitized Solar Cells
Wang, Xinwei (2012-10-31)Over the past decades, vapor deposition of thin films has gained wide interest in both industry and academia, and a variety of its applications have been demonstrated. As one of the most promising vapor deposition techniques, ... -
Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy Gerald (American Institute of Physics, 2012)Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD). The films maintained their amorphous character up to temperatures over 500 \(^{\circ}\)C. The highest ... -
Atomic layer depositied Indium oxy-sulfide on CZT(S,Se) absorbers
Jayaraman, Ashwin N Kr; Kim, Sang Bok; Gordon, Roy Gerald (2015) -
Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication
Au, Yeung Billy; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy Gerald (2011) -
Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomás; Gordon, Roy Gerald (American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ... -
Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
Park, Helen Hejin; Jayaraman, Ashwin N Kr; Heasley, Rachel Lenox; Yang, Chuanxi; Hartle, Lauren Ann; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy Gerald (AIP Publishing, 2014)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to ... -
Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy Gerald; Lehn, Jean-Sébastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V. (Electrochemical Society, 2009)Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited ... -
Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor
Wang, Hongtao; Gordon, Roy Gerald; Alvis, Roger; Ulfig, Robert M. (John Wiley & Sons, 2009-10-14)Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure ... -
Atomic Layer Deposition of Tin Monosulfide Thin Films
Sinsermsuksakul, Prasert; Heo, Jae Yeong; Noh, Wontae; Hock, Adam S.; Gordon, Roy Gerald (Wiley-VCH, 2011)Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate ... -
Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy Gerald (Royal Society of Chemistry, 2012)Atomic layer deposition (ALD) of tin oxide \((SnO_2)\) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric ... -
Atomic Layer Deposition of Tin(II) Sulfide
Sinsermsuksakul, Prasert; Heo, Jaeyeong; Gordon, Roy Gerald (2011) -
Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
Park, Helen Hejin; Heasley, Rachel Lenox; Gordon, Roy Gerald (American Institute of Physics, 2013)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from ... -
Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores
Chen, Peng; Mitsui, Toshiyuki; Farmer, Damon B.; Golovchenko, Jene; Gordon, Roy; Branton, Daniel (American Chemical Society, 2004)Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and ... -
Atomic layer epitaxy of rare earth oxide films on GaAs(111)A and their device properties
Liu, Yiqun; Xu, Min; Heo, Jaeyeong; Ye, Peide D.; Gordon, Roy Gerald (2011)The aggressive scaling of MOSFETs has created interest in using high-mobility III-V channel materials to replace traditional strained Si. However, it has been challenging to form high- \(\kappa\) dielectrics that can ...