Now showing items 1-3 of 3

    • Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties 

      Park, Helen Hejin; Jayaraman, Ashwin N Kr; Heasley, Rachel Lenox; Yang, Chuanxi; Hartle, Lauren Ann; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy Gerald (AIP Publishing, 2014)
      Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to ...
    • Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing 

      Park, Helen Hejin; Heasley, Rachel Lenox; Gordon, Roy Gerald (American Institute of Physics, 2013)
      Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from ...
    • Vapor deposition of copper(I) bromide films via a two-step conversion process 

      Heasley, Rachel Lenox; Chang, Christina Marie; Davis, Luke M; Liu, Kathy; Gordon, Roy Gerald (American Vacuum Society, 2017)
      Thin films of Cu2S grown by pulsed-chemical vapor deposition of bis(N,N'-di-secbutylacetamidinato)dicopper(I) and hydrogen sulfide were converted to CuBr upon exposure to anhydrous hydrogen bromide. X-ray diffraction shows ...