Now showing items 1-8 of 8

    • Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties 

      Park, Helen Hejin; Jayaraman, Ashwin N Kr; Heasley, Rachel Lenox; Yang, Chuanxi; Hartle, Lauren Ann; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy Gerald (AIP Publishing, 2014)
      Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to ...
    • Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing 

      Park, Helen Hejin; Heasley, Rachel Lenox; Gordon, Roy Gerald (American Institute of Physics, 2013)
      Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from ...
    • Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells 

      Sun, Leizhi; Haight, Richard; Sinsermsuksakul, Prasert; Bok Kim, Sang; Park, Helen Hejin; Gordon, Roy Gerald (American Institute of Physics, 2013)
      Band alignment is critical to the performance of heterojunction thin film solar cells. In this letter, we report band alignment studies of SnS/Zn(O,S) heterojunctions with various compositions of Zn(O,S). Valence band ...
    • Development of Earth-Abundant and Non-Toxic Thin-Film Solar Cells 

      Park, Helen Hejin (2014-12-08)
      Although solar energy is the most abundant energy resource available, photovoltaic solar cells must consist of sufficiently abundant and environmentally friendly elements, for scalable low-cost production to provide a major ...
    • Efficient Readout of a Single Spin State in Diamond via Spin-to-Charge Conversion 

      Shields, Brendan John; Unterreithmeier, Quirin; de Leon, N; Park, H; Lukin, Mikhail D. (American Physical Society (APS), 2015)
      Efficient readout of individual electronic spins associated with atomlike impurities in the solid state is essential for applications in quantum information processing and quantum metrology. We demonstrate a new method for ...
    • Enhancing the Efficiency of SnS Solar Cells bia Band-Offset Engineering with a Zinc Oxysulfide Buffer Layer 

      Sinsermsuksakul, Prasert; Hartman, Katy; Kim, Sang Bok; Sun, Leizhi; Park, Helen Hejin; Chakraborty, Rupak; Buonassisi, Tonio; Gordon, Roy Gerald (American Institute of Physics, 2013)
      SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure ...
    • Framework to predict optimal buffer layer pairing for thin film solar cell absorbers: A case study for tin sulfide/zinc oxysulfide 

      Mangan, Niall; Brandt, Riley E.; Steinmann, Vera; Jaramillo, R; Yang, Chuanxi; Poindexter, Jeremy R.; Chakraborty, Rupak; Park, Helen; Zhao, Xizhu; Gordon, Roy Gerald; Buonassisi, Tonio (AIP Publishing, 2015)
      An outstanding challenge in the development of novel functional materials for optoelectronic devices is identifying suitable charge-carrier contact layers. Herein, we simulate the photovoltaic device performance of various ...
    • Trapping and Manipulation of Isolated Atoms Using Nanoscale Plasmonic Structures 

      Chang, D. E.; Thompson, J. D.; Park, H; Vuletic´, V.; Zibrov, Alexander S; Zoller, P.; Lukin, Mikhail D. (American Physical Society (APS), 2009)
      We propose and analyze a scheme to interface individual neutral atoms with nanoscale solid-state systems. The interface is enabled by optically trapping the atom via the strong near-field generated by a sharp metallic ...