Now showing items 21-40 of 102

• #### Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells ﻿

(American Institute of Physics, 2013)
Band alignment is critical to the performance of heterojunction thin film solar cells. In this letter, we report band alignment studies of SnS/Zn(O,S) heterojunctions with various compositions of Zn(O,S). Valence band ...
• #### Bromine-free quinone flow battery chemistries ﻿

(American Chemical Society, 2015)
• #### Chemical Vapor Deposition (CVD) of Manganese Self-Aligned Diffusion Barriers for Cu Interconnections in Microelectronics ﻿

(Materials Research Society, 2009)
Barriers to prevent diffusion of copper, oxygen and water vapor were formed by CVD using a manganese precursor vapor that reacts with silica surfaces. The manganese metal penetrates only a few nanometers into the silica ...
• #### Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects ﻿

(Electrochemical Society, 2012)
An interlayer of face centered cubic (fcc) Co4N has demonstrated significant improvements in adhesion between copper and diffusion barrier layers. This fcc phase of Co4N was prepared by chemical vapor deposition (CVD) using ...
• #### Chemical Vapor Deposition of Cobalt-based Thin Films for Microelectronics ﻿

(2014-02-25)
In microelectronics, the device size continues to shrink to improve the performance and functionality, which sets technical challenges for the integrated circuit (IC) fabrication. Novel materials and processing techniques ...
• #### Chemical Vapor Deposition of Thin Film Materials for Copper Interconnects in Microelectronics ﻿

(2012-07-24)
The packing density of microelectronic devices has increased exponentially over the past four decades. Continuous enhancements in device performance and functionality have been achieved by the introduction of new materials ...
• #### Comparison of Capacity Retention Rates During Cycling of Quinone-Bromide Flow Batteries ﻿

(Cambridge University Press (CUP), 2016)
We use cyclic charge-discharge experiments to evaluate the capacity retention rates of two quinone-bromide flow batteries (QBFBs). These aqueous QBFBs use a negative electrolyte containing either anthraquinone-2,7-disulfonic ...
• #### Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO$_3$ Heterostructures Grown by Atomic Layer Deposition ﻿

(American Chemical Society, 2012)
The formation of a two-dimensional electron gas (2-DEG) using $SrTiO_3$ (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous ...
• #### Designing Novel Semiconductor Nanowire Structures: Synthesis and Fabrication for Localized Photodetection and Sensing ﻿

(2015-05-06)
Semiconductor nanowires display a wide range of structural and functional diversity, and as such provide a platform for nanomaterials research. At present, a number of nanowire structural motifs have been discovered and ...
• #### Development of Earth-Abundant and Non-Toxic Thin-Film Solar Cells ﻿

(2014-12-08)
Although solar energy is the most abundant energy resource available, photovoltaic solar cells must consist of sufficiently abundant and environmentally friendly elements, for scalable low-cost production to provide a major ...
• #### Development of Earth-Abundant Tin(II) Sulfide Thin-Film Solar Cells by Vapor Deposition ﻿

(2013-09-18)
To sustain future civilization, the development of alternative clean-energy technologies to replace fossil fuels has become one of the most crucial and challenging problems of the last few decades. The thin film solar cell ...
• #### Direct Liquid Evaporation Chemical Vapor Deposition(DLE-CVD) of Nickel, Manganese and Copper-Based Thin Films for Interconnects in Three-Dimensional Microelectronic Systems ﻿

(2016-05-19)
Electrical interconnects are an intrinsic part of any electronic system. These interconnects have to perform reliably under a wide range of environmental conditions and survive stresses induced from thermal, mechanical, ...
• #### Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation ﻿

(American Chemical Society (ACS), 2017)
In advanced microelectronics, precise design of liner and capping layers become critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate ...
• #### Direct-liquid-evaporation chemical vapor deposition of smooth, highly conformal cobalt and cobalt nitride thin films ﻿

(Royal Society of Chemistry (RSC), 2015)
• #### Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films ﻿

(American Chemical Society, 2010)
Smooth and continuous films of nickel nitride (NiNx) with excellent step coverage were deposited from a novel nickel amidinate precursor, Ni(MeC(NtBu)2)2, and either ammonia (NH3) or a mixture of NH3 and hydrogen (H2) gases ...

(2015)
• #### Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy ﻿

(AIP Publishing, 2015)
Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga2O3:Sn) is investigated by X-ray absorption spectroscopy(XAS). A single crystal of β-Ga2O3:Sn grown using edge-defined film-fed growth ...
• #### Effect of growth temperature on carrier collection in SnS-based solar cells ﻿

(2017-04-14)
• #### Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors ﻿

(American Institute of Physics, 2013)
InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) ...
• #### Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition ﻿

(Electrochemical Society, 2008)
Amorphous LaAlO3 films were deposited on hydrogen-terminated silicon substrates by atomic layer deposition (ALD) at 300 oC. The precursors were lanthanum tris(N,N'-diisopropylformamidinate), trimethylaluminum (TMA) and ...