(AIP Publishing, 1979) Surko, C. M.; Simons, A. L.; Auston, D. H.; Golovchenko, Jene; Slusher, R. E.; Venkatesan, T. N. C.
We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature‐dependent properties of both the solid and liquid are included. We compare this calculation with experimental results for the time duration of the melted surface for crystalline Si and Ge. The temperature of the liquid surface as a function of time is calculated and effects associated with the hot liquid and the vapor are also discussed.
(AIP Publishing, 1979) Auston, D. H.; Golovchenko, Jene; Simons, A. L.; Surko, C. M.; Venkatesan, T. N. C.
Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied as a function of laser energy at 1.06‐ and 0.53‐μm wavelength for both implanted and unimplanted samples. Thresholds for initiation of melting and damaging the surface are obtained directly. With the aid of channeling–Rutherford‐backscattering measurements, the duration of melt necessary for annealing implanted samples is determined. Results for unimplanted silicon at 530 nm are compared with recent numerical calculations. In addition, measuremnts of the fall time of the reflectivity as the liquid‐solid interface approaches the surface enables us to estimate regrowth velocities. A simple scheme is also discussed for efficient annealing with dual wavelengths.
