Now showing items 1-2 of 2

    • La2−xSrxCuO4 superconductor nanowire devices 

      Litombe, Nicholas E.; Bollinger, A.T.; Hoffman, Jennifer Eve; Božović, I. (Elsevier BV, 2014)
      La2−xSrxCuO4 nanowire devices have been fabricated and characterized using electrical transport measurements. Nanowires with widths down to 80 nm are patterned using high-resolution electron beam lithography. However, the ...
    • Transistors Formed from a Single Lithography Step Using Information Encoded in Topography 

      Dickey, Michael D.; Russell, Kasey Joe; Lipomi, Darren J.; Narayanamurti, Venkatesh; Whitesides, George McClelland (Wiley-Blackwell, 2010)
      This paper describes a strategy for the fabrication of functional electronic components (transistors, capacitors, resistors, conductors, and logic gates but not, at present, inductors) that combines a single layer of ...