Browsing Faculty of Arts and Sciences by Keyword "gallium arsenide"
Now showing items 1-2 of 2
-
Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
(American Institute of Physics, 2013)InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) ... -
Heteroepitaxy of \(La_2O_3\) and \(La_{2-x}Y_xO_3\) on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
(American Chemical Society, 2013-02-04)GaAs metal–oxide–semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the ...