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Ion Implantation and Annealing of Oxides
(Materials Research Society, 1987)
Ion implantation damage and annealing results are presented for a number of crystalline oxides. In Al<sub>2</sub>O<sub>3</sub>, the amorphous phase produced by ion bombardment of the pure material first crystallizes in ...
Stoichiometry Issues in Pulsed Laser Deposition of Alloys Grown from Multicomponent Targets
(Springer Verlag, 1999)
We have examined the degree of congruent transfer in pulsed-laser deposition (PLD) of alloy thin films in phases that are stable over a wide range of compositions. SiGe films were deposited by PLD onto high-purity glassy ...
Ion Implantation and Annealing of SrTiO3 and CaTiO3
(Materials Research Society, 1987)
Ion implantation damage and thermal annealing results are presented for single crystals of SrTiO<sub>3</sub> and CaTiO<sub>3</sub>. The near-surface region of both of these materials can be made amorphous by low doses ...
Tunable Nanometer Electrode Gaps by MeV Ion Irradiation
(American Institute of Physics, 2012)
We report the use of MeV ion-irradiation-induced plastic deformation of amorphous materials to fabricate electrodes with nanometer-sized gaps. Plastic deformation of the amorphous metal \(\text{Pd}_{80}\text{Si}_{20}\) ...
Lateral Templating for Guided Self-Organization of Sputter Morphologies
(Wiley Interscience, 2005)
The Amorphous-Crystal Interface in Silicon: a Tight-Binding Simulation
(The American Physical Society, 1998)
The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. ...
Aperiodic Stepwise Growth Model for the Velocity and Orientation Dependence of Solute Trapping
(Materials Research Society, 1987)
An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient <i>k</i> during rapid solidification is developed in detail. Starting with a simple stepwise growth model, ...
Nonequilibrium Interface Kinetics During Rapid Solidification
(Materials Research Society, 1987)
The deviations from local equilibrium at a rapidly moving solid-liquid interface are well documented. The fraction of solute atoms in the liquid at the interface that joins the crystal during rapid solidification approaches ...
Ion-beam Sculpting at Nanometre Length Scales
(Nature Publishing Group, 2001)
Manipulating matter at the nanometre scale is important for many electronic, chemical and biological advances, but present solid-state fabrication methods do not reproducibly achieve dimensional control at the nanometre ...
Nanopore Fabrication in Amorphous Si: Viscous Flow Model and Comparison to Experiment
(American Institute of Physics, 2010)
Nanopores fabricated in free-standing amorphous silicon thin films were observed to close under 3 keV argon ion irradiation. The closing rate, measured in situ, exhibited a memory effect: at the same instantaneous radius, ...