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Location of atoms in the first monolayer of GaAs on Si

Patel, J. R.; Freeland, P. E.; Hybertsen, M. S.; Jacobson, D. C.; Golovchenko, Jene Andrew (American Physical Society (APS), 1987)

The position of Ga and As atoms at monolayer coverages of heteroepitaxial GaAs on clean Si(111) have been measured by x-ray standing waves in UHV. Though both As and Ga are incident on the surface As atoms choose to occupy ...

Arsenic atom location on passivated silicon (111) surfaces

Patel, J. R.; Golovchenko, Jene Andrew; Freeland, P. E.; Gossmann, H- J. (American Physical Society (APS), 1987)

The position of As atoms on a clean Si(111) surface has been determined with x-ray standing waves in ultrahigh vacuum. The As atoms occupy exclusively the top half of the silicon (111) double plane and lie at 0.17 Å above ...