The time‐resolved reflectivity at 0.63 μm from arsenic‐implanted silicon crystals has been measured during annealing by a 1.06‐μm laser pulse of 50‐ns duration. The reflectivity was observed to change abruptly to the value ...

A simple and efficient method of annealing ion‐implantation damage in semiconductors is demonstrated which utilizes a relatively weak optical pulse in the visible to initiate surface melting in combination with a more ...

A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion‐implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting ...

The surface crystallinity ans stoichiometry of tellurium implanted GaAs annealed with a frequency doubled Nd glass laser using time resolved reflectivity and channeling measurements has been studied. By optimizing the ...

Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied ...

We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature‐dependent properties of both the solid ...