Now showing items 1-2 of 2
Dual-wavelength laser annealing
(AIP Publishing, 1979)
A simple and efficient method of annealing ion‐implantation damage in semiconductors is demonstrated which utilizes a relatively weak optical pulse in the visible to initiate surface melting in combination with a more ...
Study of surface crystallinity and stoichiometry of laser annealed GaAs using time resolved reflectivity and channeling
(American Institute of Physics, 1979)
The surface crystallinity ans stoichiometry of tellurium implanted GaAs annealed with a frequency doubled Nd glass laser using time resolved reflectivity and channeling measurements has been studied. By optimizing the ...