The surface crystallinity ans stoichiometry of tellurium implanted GaAs annealed with a frequency doubled Nd glass laser using time resolved reflectivity and channeling measurements has been studied. By optimizing the ...

Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied ...

We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature‐dependent properties of both the solid ...