The time‐resolved reflectivity at 0.63 μm from arsenic‐implanted silicon crystals has been measured during annealing by a 1.06‐μm laser pulse of 50‐ns duration. The reflectivity was observed to change abruptly to the value ...

The surface crystallinity ans stoichiometry of tellurium implanted GaAs annealed with a frequency doubled Nd glass laser using time resolved reflectivity and channeling measurements has been studied. By optimizing the ...

Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied ...