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Ion Implantation and Annealing of Oxides
(Materials Research Society, 1987)
Ion implantation damage and annealing results are presented for a number of crystalline oxides. In Al<sub>2</sub>O<sub>3</sub>, the amorphous phase produced by ion bombardment of the pure material first crystallizes in ...
Asymmetric Melting and Freezing Kinetics in Silicon.
(American Physical Society, 1986)
We report measurements of the melting velocity of amorphous Si relative to that of (100) crystalline Si. These measurements permit the first severe experimental test of theories describing highly nonequilibrium freezing ...
Solute Trapping in Silicon by Lateral Motion of {111} Ledges
(American Physical Society, 1986)
The orientation dependence of the nonequilibrium partition coefficient of Bi in Si at constant solid-liquid interface velocity has been measured. The partition coefficient, measured with pulsed-laser melting techniques on ...
Ion Implantation and Annealing of SrTiO3 and CaTiO3
(Materials Research Society, 1987)
Ion implantation damage and thermal annealing results are presented for single crystals of SrTiO<sub>3</sub> and CaTiO<sub>3</sub>. The near-surface region of both of these materials can be made amorphous by low doses ...
Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers
(American Institute of Physics, 1984)
Dissipation-Theory Treatment of the Transition from Diffusion-Controlled to Diffusionless Solidification
(American Institute of Physics, 1983)
The steady-state velocity of a planar liquid-solid interface is predicted by calculating the free energy dissipated by irreversible processes at the interface and equating it to the available driving free energy. A solute ...
Aperiodic Stepwise Growth Model for the Velocity and Orientation Dependence of Solute Trapping
(Materials Research Society, 1987)
An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient <i>k</i> during rapid solidification is developed in detail. Starting with a simple stepwise growth model, ...
Nonequilibrium Interface Kinetics During Rapid Solidification
(Materials Research Society, 1987)
The deviations from local equilibrium at a rapidly moving solid-liquid interface are well documented. The fraction of solute atoms in the liquid at the interface that joins the crystal during rapid solidification approaches ...
Application of Onsager's Reciprocity Relations to Interface Motion During Phase Transformations.
(Journal of Chemical Physics, 1989)
A number of theories have been developed for the kinetics of steady-state interface motion during a phase transformation. One requirement of such theories is that they satisfy Onsager’s reciprocity relations for coupled ...
Interface Velocity Transients During Melting of a-Si/c-Si Thin Films
(Materials Research Society, 1988)
The authors report transient conductance measurement of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for ...