The authors have measured the pressure dependence of the solid phase epitaxial growth (SPEG) rate of self-implanted Si (100) by using the in-situ time-resolved reflectivity technique in a high-temperature and high-pressure ...

The authors report transient conductance measurement of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for ...

A brief review is given of transition-state theory, both for the case of unimolecular reactions in the gas phase, and for reactions in condensed phases. An argument is made that, within the context of this theory, heterogeneous ...

The steady-state velocity of a planar liquid-solid interface is predicted by calculating the free energy dissipated by irreversible processes at the interface and equating it to the available driving free energy. A solute ...

The orientation dependence of the nonequilibrium partition coefficient of Bi in Si at constant solid-liquid interface velocity has been measured. The partition coefficient, measured with pulsed-laser melting techniques on ...

A number of theories have been developed for the kinetics of steady-state interface motion during a phase transformation. One requirement of such theories is that they satisfy Onsager’s reciprocity relations for coupled ...

An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient <i>k</i> during rapid solidification is developed in detail. Starting with a simple stepwise growth model, ...

The deviations from local equilibrium at a rapidly moving solid-liquid interface are well documented. The fraction of solute atoms in the liquid at the interface that joins the crystal during rapid solidification approaches ...

Ion implantation damage and thermal annealing results are presented for single crystals of SrTiO₃ and CaTiO₃. The near-surface region of both of these materials can be made amorphous by low doses ...