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Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries
(American Physical Society (APS), 1985)
We have imaged with the tunneling microscope the microscopic surface topography of germanium layers grown by molecular-beam epitaxy on Si(111)-7×7. The surface structures corresponding to Ge(111)-c2×8 and Ge(111)-7×7 are ...
Surface doping and stabilization of Si(111) with boron
(American Physical Society (APS), 1989)
We have investigated the incorporation of boron into the Si(111) (√3×√3)R30° surface from low boron concentration up to (1/3 monolayer, using tunneling microscopy and spectroscopy and first-principles total-energy calculations. ...
Charge state dependence of channeled ion energy loss
(American Physical Society (APS), 1981)
The charge state dependence of channeled ion energy loss has been determined for a series of ions ranging from fluorine to chlorine along the ⟨110⟩ direction in a silicon crystal. Energy losses for both bare ions and ions ...
X-Ray Standing Waves at Crystal Surfaces
(American Physical Society (APS), 1980)
With use of bromine atoms, deposited on the surface of a silicon single crystal, the presence of x-ray standing waves above the crystal surface has been detected under conditions of strong Bragg diffraction.
Tunneling Images of Atomic Steps on the Si(111)7×7 Surface
(American Physical Society (APS), 1985)
Tunneling images of single atomic steps on Si(111) have been obtained with a tunneling microscope. The 7×7 reconstruction is observed to persist essentially undistorted right up to the steps. The position of each step ...
Solution to the Surface Registration Problem Using X-Ray Standing Waves
(American Physical Society (APS), 1982)
Standing waves of x rays have been used to determine the positions of bromine atoms in submonolayer coverages on a (111) silicon surface. In addition to the bromine position normal to the crystal surface its components ...
Real-Space Observation of Surface States on Si(111) 7×7 with the Tunneling Microscope
(American Physical Society (APS), 1985)
We have observed surface states indigenous to the Si(111) 7×7 superlattice with the tunneling microscope. The data show the states' energies and strengths to be strongly dependent on position in the unit mesh. Implications ...
Arsenic atom location on passivated silicon (111) surfaces
(American Physical Society (APS), 1987)
The position of As atoms on a clean Si(111) surface has been determined with x-ray standing waves in ultrahigh vacuum. The As atoms occupy exclusively the top half of the silicon (111) double plane and lie at 0.17 Å above ...
New Reconstructions on Silicon (111) Surfaces
(American Physical Society (APS), 1986)
We report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling ...
Tunneling Images of Gallium on a Silicon Surface: Reconstructions, Superlattices, and Incommensuration
(American Physical Society (APS), 1988)
Real-space images of an incommensurate superlattice on a monolayer-gallium-covered silicon (111) surface have been obtained with the tunneling microscope. Large, internally ordered supercells which in turn form a lattice ...