An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient <i>k</i> during rapid solidification is developed in detail. Starting with a simple stepwise growth model, ...

The deviations from local equilibrium at a rapidly moving solid-liquid interface are well documented. The fraction of solute atoms in the liquid at the interface that joins the crystal during rapid solidification approaches ...

Ion implantation damage and thermal annealing results are presented for single crystals of SrTiO₃ and CaTiO₃. The near-surface region of both of these materials can be made amorphous by low doses ...

Ion implantation damage and annealing results are presented for a number of crystalline oxides. In Al₂O₃, the amorphous phase produced by ion bombardment of the pure material first crystallizes in ...

A theory of a two-dimensional electron-hole system in a strong magnetic field is developed. Three different models are considered, whose common distinguishing feature is electron-hole asymmetry. It is shown that this ...

A theory of the self-trapping barrier in crystal with degenerate bands (spin S = 1) is developed for holes and Frenkel excitons. It is shown that band degeneracy leads to spontaneous symmetry breaking of the barrier, which ...

We have imaged with the tunneling microscope the microscopic surface topography of germanium layers grown by molecular-beam epitaxy on Si(111)-7×7. The surface structures corresponding to Ge(111)-c2×8 and Ge(111)-7×7 are ...

We have investigated the incorporation of boron into the Si(111) (√3×√3)R30° surface from low boron concentration up to (1/3 monolayer, using tunneling microscopy and spectroscopy and first-principles total-energy calculations. ...

The charge state dependence of channeled ion energy loss has been determined for a series of ions ranging from fluorine to chlorine along the ⟨110⟩ direction in a silicon crystal. Energy losses for both bare ions and ions ...