We have measured the crystal growth rate u of B2O3-I in the amorphous phase, as it varied over five orders of magnitude with changes in temperature and pressure. We eliminated the crystal nucleation barrier by seeding the ...

We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) ...