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(2×2) Reconstructions of the {111} Polar Surfaces of GaAs
(American Physical Society, 1986)
Ab initio total-energy calculations were used to examine (2×2) reconstruction models for the (111) and (1¯1¯1¯) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms ...
Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition of GaAs(111)2x2
(American Physical Society, 1986)
The role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, ...
Variable Stoichiometry Surface Reconstructions: New Models for GaAs(1¯1¯1¯) (2×2) and (√1¯9¯×√1¯9¯)
(American Physical Society, 1986)
The (1¯ 1¯ 1¯) surface of GaAs exhibits three stable reconstructions. Two are (2×2), As stabilized and Ga stabilized respectively, and the third is \((\sqrt{19} \times \sqrt{19})\). Transitions between these structures ...