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Kinetic Disordering of Intermetallic Compounds Through First- and Second-Order Transitions by Rapid Solidification
(Springer Netherlands, 1992)
During rapid solidification of intermetallic compounds, the atoms may not have time to find the lowest-energy sites in the crystal, resulting in the growth of a solid with partially or completely suppressed chemical order. ...
Light Speed Reduction to 17 Metres per Second in an Ultracold Atomic Gas
(Nature Publishing Group, 1999)
Techniques that use quantum interference effects are being actively investigated to manipulate the optical properties of quantum systems. One such example is electromagnetically induced transparency, a quantum effect that ...
Nonequilibrium Partitioning During Rapid Solidification of Si-As Alloys
(Elsevier, 1995)
The velocity dependence of the partition coefficient was measured for rapid solidification of polycrystalline Si-4.5 at% As and Si-9 at% As alloys induced by pulsed laser melting. The results constitute the first test of ...
Generation and synchronous tree-adjoining grammars
(Blackwell Publishing, 1992)
Tree-adjoining grammars (TAG) have been proposed as a formalism for generation based on the intuition that the extended domain of syntactic locality that TAGs provide should aid in localizing semantic dependencies as well, ...
Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanisms
(American Institute of Physics, 1991)
The effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rate, v, of intrinsic Ge (100) and undoped and doped Si (100) into their respective
self-implanted amorphous phases are reported. Samples were ...
Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism
(American Institute of Physics, 1994)
With rapid solidification following pulsed laser melting, we have measured the dependence on
interface orientation of the amount of solute trapping of several group III, IV, and V elements (As,
Ga, Ge, In, Sb, Sn) in ...
The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics
(American Physical Society, 1991)
The solid-phase epitaxial-growth rate of crystalline Si from the amorphous Si on the tensile side is greater than on the compressive side of elastically bent wafers, in marked contrast to the behavior observed under ...
Synchronous tree-adjoining grammars
(Association for Computational Linguistics, 1990)
The unique properties of tree-adjoining grammars (TAG) present a challenge for the application of TAGs beyond the limited confines of syntax, for instance, to the task of semantic interpretation or automatic translation ...
Generation and synchronous tree-adjoining grammars
(Association for Computational Linguistics, 1990)
Tree-adjoining grammars (TAG) have been proposed as a formalism for generation based on the intuition that the extended domain of syntactic locality that TAGs provide should aid in localizing semantic dependencies as well, ...
A viewer for PostScript documents
(Association for Computing Machinery, 1996)
We describe a PostScript viewer that provides navigation and annotation functionality similar to that of paper documents using simple unified user-interface techniques.