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Crystal Growth Kinetics of Boron Oxide Under Pressure
(American Institute of Physics, 1985)
We have measured the crystal growth rate u of B2O3-I in the amorphous phase, as it varied over five orders of magnitude with changes in temperature and pressure. We eliminated the crystal nucleation barrier by seeding the ...
Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers
(American Institute of Physics, 1985)
We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) ...