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Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers
(American Institute of Physics, 1985)
We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) ...