Antimony-doped Tin(II) Sulfide Thin Films
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CitationSinsermsuksakul, Prasert, Rupak Chakraborty, Sang Bok Kim, Steven M. Heald, Tonio Buonassisi, and Roy G. Gordon. Forthcoming. Antimony-doped tin(II) sulfide thin films. Chemistry of Materials.
AbstractThin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony \((\sim 1%)\) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations \((\sim 5%)\) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:10021411
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