Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
Citation
Heo, Jaeyeong, Sang Bok Kim, and Roy Gerald Gordon. 2012. Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas. Journal of Materials Chemistry 22(11): 4599-4602.Abstract
Atomic layer deposition (ALD) of tin oxide \((SnO_2)\) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from \(130-250^{\circ}C\) were studied. Highly conducting \(SnO_2\) films were obtained at \(200-250^{\circ}C\) with the growth per cycle of \(~1.4 \mathring{A}\)/cycle, while insulating films were grown at temperatures lower than \(200^{\circ}C\). Conformal growth of \(SnO_2\) in holes of aspect-ratios up to ~50 : 1 was successfully demonstrated.Terms of Use
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