# Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas

 Title: Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas Author: Heo, Jaeyeong; Gordon, Roy Gerald; Kim, Sang Bok Note: Order does not necessarily reflect citation order of authors. Citation: Heo, Jaeyeong, Sang Bok Kim, and Roy Gerald Gordon. 2012. Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas. Journal of Materials Chemistry 22(11): 4599-4602. Full Text & Related Files: Heo_Atomic.pdf (353.6Kb; PDF) Abstract: Atomic layer deposition (ALD) of tin oxide $$(SnO_2)$$ thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from $$130-250^{\circ}C$$ were studied. Highly conducting $$SnO_2$$ films were obtained at $$200-250^{\circ}C$$ with the growth per cycle of $$~1.4 \mathring{A}$$/cycle, while insulating films were grown at temperatures lower than $$200^{\circ}C$$. Conformal growth of $$SnO_2$$ in holes of aspect-ratios up to ~50 : 1 was successfully demonstrated. Published Version: doi:10.1039/C2JM16557K Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10021582 Downloads of this work: