Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
| Title: | Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas |
| Author: |
Heo, Jaeyeong; Gordon, Roy Gerald; Kim, Sang Bok
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Heo, Jaeyeong, Sang Bok Kim, and Roy Gerald Gordon. 2012. Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas. Journal of Materials Chemistry 22(11): 4599-4602. |
| Full Text & Related Files: |
Heo_Atomic.pdf (353.6Kb; PDF) 
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| Abstract: | Atomic layer deposition (ALD) of tin oxide \((SnO_2)\) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from \(130-250^{\circ}C\) were studied. Highly conducting \(SnO_2\) films were obtained at \(200-250^{\circ}C\) with the growth per cycle of \(~1.4 \mathring{A}\)/cycle, while insulating films were grown at temperatures lower than \(200^{\circ}C\). Conformal growth of \(SnO_2\) in holes of aspect-ratios up to ~50 : 1 was successfully demonstrated. |
| Published Version: | doi:10.1039/C2JM16557K |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:10021582 |
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